Materials Physics Department, Sandia National Laboratories, Livermore, California 94550, United States.
Langmuir. 2012 Feb 7;28(5):3024-31. doi: 10.1021/la203574y. Epub 2012 Jan 20.
The growth of stoichiometric CuInSe(2) (CIS) on Au substrates using electrochemical atomic layer deposition (E-ALD) is reported here. Parameters for a ternary E-ALD cycle were investigated and included potentials, step sequence, solution compositions and timing. CIS was also grown by combining cycles for two binary compounds, InSe and Cu(2)Se, using a superlattice sequence. The formation, composition, and crystal structure of each are discussed. Stoichiometric CIS samples were formed using the superlattice sequence by performing 25 periods, each consisting of 3 cycles of InSe and 1 cycle of Cu(2)Se. The deposits were grown using 0.14, -0.7, and -0.65 V for Cu, In, and Se precursor solutions, respectively. XRD patterns displayed peaks consistent with the chalcopyrite phase of CIS, for the as-deposited samples, with the (112) reflection as the most prominent. AFM images of deposits suggested conformal deposition, when compared with corresponding image of the Au on glass substrate.
本文报道了使用电化学原子层沉积（E-ALD）在 Au 衬底上生长化学计量比的 CuInSe2（CIS）。研究了三元 E-ALD 循环的参数，包括电位、步骤序列、溶液组成和时间。还通过使用超晶格序列组合两种二元化合物 InSe 和 Cu2Se 的循环来生长 CIS。讨论了它们的形成、组成和晶体结构。通过执行 25 个周期，每个周期由 3 个 InSe 循环和 1 个 Cu2Se 循环，使用超晶格序列形成了化学计量比的 CIS 样品。沉积使用的 Cu、In 和 Se 前体溶液的电位分别为 0.14、-0.7 和-0.65 V。XRD 图谱显示出与 CIS 的黄铜矿相一致的峰，对于沉积的样品，（112）反射是最突出的。与玻璃衬底上的 Au 相对应的图像相比，沉积的 AFM 图像表明了共形沉积。
