Rukin S N
Institute of Electrophysics, UB, RAS, Yekaterinburg 620016, Russia.
Rev Sci Instrum. 2020 Jan 1;91(1):011501. doi: 10.1063/1.5128297.
This paper presents a systematized review of the research on the production of nanosecond high-power pulses using solid-state generators based on an inductive energy store and a semiconductor opening switch that have been performed in the past 25 years. This research has been underway since 1992-1993 when the nanosecond cutoff of ultrahigh-density currents in semiconductor diodes was discovered and named the SOS (Semiconductor Opening Switch) effect. The discovery of the SOS effect provided a breakthrough in the development of semiconductor generators, as their most important characteristics, such as pulse power and output voltage, were increased tens and hundreds of times compared with previously known semiconductor generators. In particular, in the nanosecond semiconductor technology, megavolt voltages combined with gigawatt peak powers have been achieved. This review considers the main physical processes that determine the mechanism of operation of a SOS based on the SOS effect. The principle of operation, design, and characteristics of SOS diodes and SOS generators is described, and prospects for their further development are discussed. Examples are given of using SOS generators in various pulsed power applications such as electron accelerators, X-ray pulse devices, high-power microwave electronics, pumping of gas lasers, and ignition of electrical discharges.
本文对过去25年中基于电感储能和半导体断路开关的固态发生器产生纳秒高功率脉冲的研究进行了系统综述。这项研究自1992 - 1993年以来一直在进行，当时发现了半导体二极管中超高密度电流的纳秒截止现象，并将其命名为SOS（半导体断路开关）效应。SOS效应的发现为半导体发生器的发展带来了突破，因为其最重要的特性，如脉冲功率和输出电压，与先前已知的半导体发生器相比提高了数十倍和数百倍。特别是在纳秒半导体技术中，已经实现了兆伏电压与吉瓦峰值功率的结合。本综述考虑了基于SOS效应决定SOS工作机制的主要物理过程。描述了SOS二极管和SOS发生器的工作原理、设计和特性，并讨论了它们进一步发展的前景。给出了SOS发生器在各种脉冲功率应用中的示例，如电子加速器、X射线脉冲装置、高功率微波电子学、气体激光器泵浦以及放电点火。
