Zheng Bo-Chi, Shi Jen-Bin, Lin Hsien-Sheng, Hsu Po-Yao, Lee Hsuan-Wei, Lin Chih-Hsien, Lee Ming-Way, Kao Ming-Cheng
Ph.D. Program of Electrical and Communications Engineering, Feng Chia University, Taichung 40724, Taiwan.
Department of Electrical Engineering, Feng Chia University, Taichung 40724, Taiwan.
Micromachines (Basel). 2020 Jan 30;11(2):153. doi: 10.3390/mi11020153.
Stannous oxide (SnO) nanowires were synthesized by a template and catalyst-free thermal oxidation process. After annealing a Sn nanowires-embedded anodic aluminum oxide (AAO) template in air, we obtained a large amount of SnO nanowires. SnO nanowires were first prepared by electrochemical deposition and an oxidization method based on an AAO template. The preparation of SnO nanowires used aluminum sheet (purity 99.999%) and then a two-step anodization procedure to obtain a raw alumina mold. Finally, transparent alumina molds (AAO template) were obtained by reaming, soaking with phosphoric acid for 20 min, and a stripping process. We got a pore size of < 20 nm on the transparent alumina mold. In order to meet electroplating needs, we produced a platinum film on the bottom surface of the AAO template by using a sputtering method as the electrode of electroplating deposition. The structure was characterized by X-ray diffraction (XRD). High resolution transmission electron microscopy (HRTEM) and field emission scanning electron microscopy (FESEM) with X-ray energy dispersive spectrometer (EDS) were used to observe the morphology. The EDS spectrum showed that components of the materials were Sn and O. FE-SEM results showed the synthesized SnO nanowires have an approximate length of ~10-20 μm with a highly aspect ratio of > 500. SnO nanowires with a Sn/O atomic ratio of ~1:1 were observed from EDS. The crystal structure of SnO nanowires showed that all the peaks within the spectrum lead to SnO with a tetragonal structure. This study may lead to the use of the 1D structure nanowires into electronic nanodevices and/or sensors, thus leading to nano-based functional structures.
通过无模板和无催化剂的热氧化工艺合成了氧化亚锡（SnO）纳米线。在空气中对嵌入Sn纳米线的阳极氧化铝（AAO）模板进行退火后，我们获得了大量的SnO纳米线。SnO纳米线最初是通过基于AAO模板的电化学沉积和氧化方法制备的。SnO纳米线的制备使用铝板（纯度99.999%），然后通过两步阳极氧化程序获得原始氧化铝模具。最后，通过扩孔、用磷酸浸泡20分钟和剥离工艺获得透明氧化铝模具（AAO模板）。我们在透明氧化铝模具上获得了小于20nm的孔径。为了满足电镀需求，我们使用溅射方法在AAO模板的底表面制备了铂膜作为电镀沉积的电极。通过X射线衍射（XRD）对结构进行了表征。使用高分辨率透射电子显微镜（HRTEM）和带有X射线能量色散谱仪（EDS）的场发射扫描电子显微镜（FESEM）来观察形态。EDS光谱表明材料的成分是Sn和O。FE-SEM结果表明合成的SnO纳米线的近似长度为~10 - 20μm，长径比大于500。从EDS观察到Sn/O原子比约为1:1的SnO纳米线。SnO纳米线的晶体结构表明光谱内的所有峰均对应具有四方结构的SnO。这项研究可能会导致将一维结构的纳米线应用于电子纳米器件和/或传感器，从而产生基于纳米的功能结构。
