通过聚乙烯吡咯烷酮处理制备高性能准二维钙钛矿发光二极管

Wang Zijun, Xu Xiaoqiang, Gao Lin, Yan Xingwu, Li Lu, Yu Junsheng

Research Institute for New Materials Technology, Chongqing University of Arts and Sciences, Chongqing, 402160, People's Republic of China.

State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China (UESTC), Chengdu, 610054, People's Republic of China.

Nanoscale Res Lett. 2020 Feb 4;15(1):34. doi: 10.1186/s11671-020-3260-z.

In this work, we fabricate poly(vinylpyrrolidone) (PVP)-treated Ruddlesden-Popper two-dimensional (quasi-2D) PPA(CsPbBr)PbBr perovskite light-emitting diodes (PeLEDs) and achieved a peak brightness of 10,700 cd m and peak current efficiency of 11.68 cd A, threefold and tenfold higher than that of the pristine device (without PVP), respectively. It can be attributed that the additive of PVP can suppress the pinholes of perovskite films owing to the excellent film-forming property, inhibiting the leakage current. Besides, PVP treatment facilitates the formation of compact perovskite films with defect reduction. Our work paves a novel way for the morphology modulation of quasi-2D perovskite films.

在这项工作中，我们制备了经聚乙烯吡咯烷酮（PVP）处理的Ruddlesden-Popper二维（准二维）PPA(CsPbBr)PbBr钙钛矿发光二极管（PeLED），实现了10700 cd m的峰值亮度和11.68 cd A的峰值电流效率，分别比原始器件（无PVP）高3倍和10倍。这可以归因于PVP添加剂因其优异的成膜性能能够抑制钙钛矿薄膜的针孔，从而抑制漏电流。此外，PVP处理有助于形成致密的钙钛矿薄膜并减少缺陷。我们的工作为准二维钙钛矿薄膜的形貌调控开辟了一条新途径。