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通过用于绿色发光二极管的不同添加剂提高全无机钙钛矿的光电性能。

Improved photoelectric performance of all-inorganic perovskite through different additives for green light-emitting diodes.

作者信息

Yang Xianqi, Gu Huaimin, Li Shuti, Li Jihang, Shi Hengzhi, Zhang Jinyuan, Liu Nana, Liao Zebing, Xu Wenzhu, Tan Yuan

机构信息

Institute of Semiconductor Science and Technology, South China Normal University Guangzhou Guangdong China

出版信息

RSC Adv. 2019 Oct 25;9(59):34506-34511. doi: 10.1039/c9ra05053a. eCollection 2019 Oct 23.

DOI:10.1039/c9ra05053a
PMID:35529996
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9073914/
Abstract

The exceptional optical and electronic properties of all-inorganic cesium lead bromide (CsPbBr) perovskite make it an ideal new optoelectronic material, but low surface coverage limits its performance. The morphological characteristics of thin films have a great influence on the performance of perovskite light emitting diodes, especially at low coverage, and an inhomogeneous surface will lead to current leakage. To tackle this problem, the widespread adoption of composite layers including polymers poly(ethylene oxide) (PEO) and organic insulating poly(vinylpyrrolidone) (PVP) and all-inorganic perovskites is an effective way to increase the surface coverage and uniformity of perovskite films and improve the performance of perovskite light emitting devices. In our work, the perovskite thin films are investigated by using PEO and PVP dual additives, and the optimized CsPbBr-PEO-PVP LED with maximum luminance, current efficiency, and external quantum efficiency of 2353 cd m (at 7.2 V), 2.14 cd A (at 6.5 V) and 0.85% (at 6.5 V) was obtained. This work indicates that the method of using additives is not only the key to enhancing the quality of perovskite thin film, but also the key to achieving a higher performance perovskite LED.

摘要

全无机溴化铯铅(CsPbBr)钙钛矿优异的光学和电学性质使其成为一种理想的新型光电子材料,但低表面覆盖率限制了其性能。薄膜的形态特征对钙钛矿发光二极管的性能有很大影响,尤其是在低覆盖率时,表面不均匀会导致电流泄漏。为了解决这个问题,广泛采用包括聚环氧乙烷(PEO)和有机绝缘材料聚乙烯吡咯烷酮(PVP)以及全无机钙钛矿的复合层是提高钙钛矿薄膜表面覆盖率和均匀性以及改善钙钛矿发光器件性能的有效方法。在我们的工作中,通过使用PEO和PVP双添加剂对钙钛矿薄膜进行了研究,获得了优化后的CsPbBr-PEO-PVP发光二极管,其最大亮度、电流效率和外量子效率分别为2353 cd m(在7.2 V时)、2.14 cd A(在6.5 V时)和0.85%(在6.5 V时)。这项工作表明,使用添加剂的方法不仅是提高钙钛矿薄膜质量的关键,也是实现更高性能钙钛矿发光二极管的关键。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b46b/9073914/63fa6caa9007/c9ra05053a-f5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b46b/9073914/959fd3d5f97b/c9ra05053a-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b46b/9073914/b56d8b213d0f/c9ra05053a-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b46b/9073914/22ed4d86642e/c9ra05053a-f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b46b/9073914/980aaa1bb91d/c9ra05053a-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b46b/9073914/63fa6caa9007/c9ra05053a-f5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b46b/9073914/959fd3d5f97b/c9ra05053a-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b46b/9073914/b56d8b213d0f/c9ra05053a-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b46b/9073914/22ed4d86642e/c9ra05053a-f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b46b/9073914/980aaa1bb91d/c9ra05053a-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b46b/9073914/63fa6caa9007/c9ra05053a-f5.jpg

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本文引用的文献

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Nature. 2018 Oct;562(7726):245-248. doi: 10.1038/s41586-018-0575-3. Epub 2018 Oct 10.
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A Strategy for Architecture Design of Crystalline Perovskite Light-Emitting Diodes with High Performance.高性能钙钛矿发光二极管的结构设计策略。
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Efficient Inorganic Perovskite Light-Emitting Diodes with Polyethylene Glycol Passivated Ultrathin CsPbBr Films.
具有聚乙二醇钝化超薄CsPbBr薄膜的高效无机钙钛矿发光二极管
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