Payne D T, Zhang Y, Pang C L, Fielding H H, Thornton G
1Department of Chemistry, University College London, London, WC1H 0AJ UK.
2London Centre for Nanotechnology, University College London, London, WC1H 0AH UK.
Top Catal. 2017;60(6):392-400. doi: 10.1007/s11244-016-0706-8. Epub 2016 Sep 7.
Excess electrons facilitate redox reactions at the technologically relevant anatase TiO(101) surface. The availability of these electrons is related to the defect concentration at the surface. We present two-photon (2PPE, 3.10-3.54 eV) and ultraviolet (UPS, 21.2 & 40.8 eV) photoemission spectroscopy measurements evidencing an increased concentration of excess electrons following electron bombardment at room temperature. Irradiation-induced surface oxygen vacancies are known to migrate into the sub-surface at this temperature, quickly equilibrating the surface defect concentration. Hence, we propose that the irradiated surface is hydroxylated. Peaks in UPS difference spectra are observed centred 8.45, 6.50 and 0.73 eV below the Fermi level, which are associated with the 3σ and 1π hydroxyl molecular orbitals and Ti 3d band gap states, respectively. The higher concentration of excess electrons at the hydroxylated anatase (101) surface may increase the potential for redox reactions.
多余的电子有助于在具有技术相关性的锐钛矿型TiO(101)表面发生氧化还原反应。这些电子的可用性与表面的缺陷浓度有关。我们展示了双光子(2PPE,3.10 - 3.54电子伏特)和紫外(UPS,21.2及40.8电子伏特)光电子能谱测量结果,证明在室温下电子轰击后多余电子的浓度增加。已知辐照诱导的表面氧空位在该温度下迁移到次表面,迅速平衡表面缺陷浓度。因此,我们提出辐照后的表面被羟基化。在UPS差分光谱中观察到峰值,分别位于费米能级以下8.45、6.50和0.73电子伏特处,它们分别与3σ和1π羟基分子轨道以及Ti 3d带隙态相关。羟基化锐钛矿(101)表面上更高浓度的多余电子可能会增加氧化还原反应的可能性。