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在哈代模型和修正哈代模型中应变调控的拓扑结构

Strain tuned topology in the Haldane and the modified Haldane models.

作者信息

Mannaï Marwa, Haddad Sonia

机构信息

Laboratoire de Physique de la Matière Condensée, Département de Physique, Faculté des Sciences de Tunis, Université Tunis El Manar, Campus Universitaire 1060 Tunis, Tunisia.

出版信息

J Phys Condens Matter. 2020 May 20;32(22):225501. doi: 10.1088/1361-648X/ab73a1.

Abstract

We study the interplay between a uniaxial strain and the topology of the Haldane and the modified Haldane models which, respectively, exhibit chiral and antichiral edge modes. The latter were, recently, predicted by Colomés and Franz (2018 Phys. Rev. Lett. 120 086603) and expected to take place in the transition metal dichalcogenides. Using the continuum approximation and a tight-binding approach, we investigate the effect of the strain on the topological phases and the corresponding edge modes. We show that the strain could induce transitions between topological phases with opposite Chern numbers or tune a topological phase into a trivial one. As a consequence, the dispersions of the chiral and antichiral edge modes are found to be strain dependent. The strain may reverse the direction of propagation of these modes and eventually destroy them. This effect may be used for strain-tunable edge currents in topological insulators and two-dimensional transition metal dichalcogenides.

摘要

我们研究了单轴应变与分别展现手性和反手性边缘模式的哈代模型及修正哈代模型拓扑结构之间的相互作用。后者是由科洛梅斯和弗兰兹(《物理评论快报》,2018年,第120卷,086603)近期预测的,预计会出现在过渡金属二卤化物中。利用连续介质近似和紧束缚方法,我们研究了应变对拓扑相及相应边缘模式的影响。我们表明,应变可诱导具有相反陈数的拓扑相之间的转变,或将一个拓扑相调谐为平凡相。结果发现,手性和反手性边缘模式的色散与应变有关。应变可能会使这些模式的传播方向反转,并最终将其破坏。这种效应可用于拓扑绝缘体和二维过渡金属二卤化物中的应变可调边缘电流。

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