Zhang Yuheng, Liang Feng, Zhao Degang, Jiang Desheng, Liu Zongshun, Zhu Jianjun, Yang Jing, Liu Shuangtao
State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China.
Nanoscale Res Lett. 2020 Feb 10;15(1):38. doi: 10.1186/s11671-020-3263-9.
The effect of unintentionally doped hydrogen on the properties of Mg-doped p-GaN samples grown via metal-organic chemical vapor deposition (MOCVD) is investigated through room temperature photoluminescence (PL) and Hall and secondary ion mass spectroscopy (SIMS) measurements. It is found that there is an interaction between the residual hydrogen and carbon impurities. An increase of the carbon doping concentration can increase resistivity of the p-GaN and weaken blue luminescence (BL) band intensity. However, when hydrogen incorporation increased with carbon doping concentration, the increase of resistivity caused by carbon impurity is weaken and the BL band intensity is enhanced. This suggests that the co-doped hydrogen not only passivate Mg, but also can passivate carbon impurities in Mg-doped p-GaN.
通过室温光致发光（PL）、霍尔效应以及二次离子质谱（SIMS）测量，研究了通过金属有机化学气相沉积（MOCVD）生长的掺镁p型氮化镓（p-GaN）样品中无意掺杂的氢对其性能的影响。研究发现，残余氢与碳杂质之间存在相互作用。碳掺杂浓度的增加会提高p-GaN的电阻率，并减弱蓝光发光（BL）带强度。然而，当氢的掺入量随碳掺杂浓度增加时，由碳杂质引起的电阻率增加会减弱，且BL带强度会增强。这表明共掺杂的氢不仅可以钝化镁，还可以钝化掺镁p-GaN中的碳杂质。
