McEwen Benjamin, Reshchikov Michael A, Rocco Emma, Meyers Vincent, Hogan Kasey, Andrieiev Oleksandr, Vorobiov Mykhailo, Demchenko Denis O, Shahedipour-Sandvik Fatemeh
College of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Albany, New York 12203-3613, United States.
Department of Physics, Virginia Commonwealth University, Richmond, Virginia 23284-2000, United States.
ACS Appl Electron Mater. 2022 Aug 23;4(8):3780-3785. doi: 10.1021/acsaelm.1c01276. Epub 2022 Aug 8.
Beryllium has been considered a potential alternative to magnesium as a p-type dopant in GaN, but attempts to produce conductive p-GaN:Be have not been successful. Photoluminescence studies have repeatedly shown Be to have an acceptor level shallower than that of Mg, but deep Be defects and other compensating defects render most GaN:Be materials n-type or semi-insulating at best. Previous reports use molecular beam epitaxy or ion implantation to dope GaN with Be, almost exclusively. Due to the high toxicity of Be organometallics, reports of GaN:Be by metal-organic chemical vapor deposition (MOCVD) have been largely absent. Here, we report a systematic study of growth of GaN:Be by MOCVD. All doped samples show the established UV band and yellow luminescence signature of GaN:Be, and growth conditions resulting in high-quality GaN with stable Be incorporation were established. Our results show that the MOCVD growth technique allows for Be incorporation pathways that have not been possible with previous growth methodologies and is highly promising in achieving p-type conductivity in GaN:Be.
铍被认为是氮化镓中作为p型掺杂剂替代镁的潜在选择，但制备导电p型氮化镓：铍的尝试尚未成功。光致发光研究反复表明，铍的受主能级比镁的浅，但深铍缺陷和其他补偿性缺陷使得大多数氮化镓：铍材料充其量为n型或半绝缘型。以前的报告几乎都是使用分子束外延或离子注入用铍对氮化镓进行掺杂。由于铍有机金属化合物的高毒性，通过金属有机化学气相沉积（MOCVD）制备氮化镓：铍的报告基本没有。在此，我们报告了通过MOCVD生长氮化镓：铍的系统研究。所有掺杂样品都显示出已确定的氮化镓：铍的紫外波段和黄色发光特征，并确定了能实现高质量氮化镓且铍掺入稳定的生长条件。我们的结果表明，MOCVD生长技术允许采用以前的生长方法无法实现的铍掺入途径，并且在实现氮化镓：铍的p型导电性方面极具前景。
