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使用插入式石墨烯单层电极的1微米厚量子点光电探测器实现近乎全光吸收和全电荷收集。

Near full light absorption and full charge collection in 1-micron thick quantum dot photodetector using intercalated graphene monolayer electrodes.

作者信息

Chen Wenjun, Ahn Seungbae, Balingit Marquez, Wang Jiaying, Lockett Malcolm, Vazquez-Mena Oscar

机构信息

Department of NanoEngineering, Center for Memory and Recording Research, Calibaja Center for Resilient Materials and Systems, University of California San Diego, 9500 Gilman Drive, La Jolla, CA 92093, USA.

出版信息

Nanoscale. 2020 Feb 27;12(8):4909-4915. doi: 10.1039/c9nr09901h.

Abstract

Quantum dots (QDs) offer several advantages in optoelectronics such as easy solution processing, strong light absorption and size tunable direct bandgap. However, their major limitation is their poor film mobility and short diffusion length (<250 nm). This has restricted the thickness of QD film to ∼200-300 nm due to the restriction that the diffusion length imposes on film thickness in order to keep efficient charge collection. Such thin films result in a significant decrease in quantum efficiency for λ > 700 nm in QDs photodetector and photovoltaic devices, causing a reduced photoresponsivity and a poor absorption towards the near-infrared part of the sunlight spectrum. Herein, we demonstrate 1 μm thick QDs photodetectors with intercalated graphene charge collectors that avoid the significant drop of quantum efficiency towards λ > 700 nm observed in most QD optoelectronic devices. The 1 μm thick intercalated QD films ensure strong light absorption while keeping efficient charge extraction with a quantum efficiency of 90%-70% from λ = 600 nm to 950 nm using intercalated graphene layers as charge collectors with interspacing distance of 100 nm. We demonstrate that the effect of graphene on light absorption is minimal. We achieve a time-modulation response of <1 s. We demonstrate that this technology can be implemented on flexible PET substrates, showing 70% of the original performance after 1000 times bending test. This system provides a novel approach towards high-performance photodetection and high conversion photovoltaic efficiency with quantum dots and on flexible substrates.

摘要

量子点(QDs)在光电子学领域具有诸多优势,例如易于溶液处理、强光吸收以及尺寸可调的直接带隙。然而,它们的主要局限性在于薄膜迁移率较差且扩散长度较短(<250 nm)。这限制了量子点薄膜的厚度至约200 - 300 nm,因为扩散长度对薄膜厚度有限制作用,以保持有效的电荷收集。如此薄的薄膜导致量子点光电探测器和光伏器件中对于λ > 700 nm的量子效率显著降低,造成光响应性降低以及对太阳光光谱近红外部分的吸收不佳。在此,我们展示了具有插入式石墨烯电荷收集器的1μm厚量子点光电探测器,该探测器避免了在大多数量子点光电器件中观察到的对于λ > 700 nm量子效率的显著下降。1μm厚的插入式量子点薄膜确保了强光吸收,同时使用间距为100 nm的插入式石墨烯层作为电荷收集器,从λ = 600 nm到950 nm保持90% - 70%的量子效率进行有效的电荷提取。我们证明了石墨烯对光吸收的影响极小。我们实现了<1 s的时间调制响应。我们证明了该技术可以在柔性PET基板上实现,在1000次弯曲测试后仍显示出原始性能的70%。该系统为利用量子点实现高性能光电探测和高转换光伏效率以及在柔性基板上提供了一种新方法。

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