Yang Guang, Sui Guomin, Liang Yuxia, Xue Xiaodong, Feng Yaqing, Zhang Bao
School of Chemical Engineering and Technology, Tianjin University, Tianjin 300350, P. R. China.
Phys Chem Chem Phys. 2020 Feb 26;22(8):4508-4515. doi: 10.1039/c9cp06784a.
Interfacial adsorption configuration plays a crucial role in influencing the photovoltaic performance of dye-sensitized solar cells (DSSCs), and thus, theoretical investigations are needed to further understand the impacts of different absorption configurations on stoichiometric and defective TiO2(101) surfaces on the short-circuit photocurrent density (JSC) and open-circuit voltage (VOC) of DSSCs. Herein, calculations of isolated dyes and dye/TiO2 systems were performed on the donor-π bridge-acceptor (D-π-A) type porphyrin sensitizers bearing different donor moieties and an α-cyanoacrylic acid anchoring group (T1-3), using DFT and TD-DFT methods. And, for the first time, comparative analysis of interfacial electron transfer (IET) and density of states (DOS) were carried out on dye/TiO2 systems with stoichiometric and defective surfaces to provide further insight into the electronic factors influencing the efficiency of DSSCs, which can well explain the experimental variation trends of JSC and VOC values. It turned out that attachment via the carboxyl and cynao groups in a tridentate binding mode can result in more efficient IET rates and an upshifted conduction band in comparison with those of the bidentate attachment. More interestingly, we found that the adsorption configuration on defective surfaces containing an O2c vacancy induced more upshifted CBM and relatively fast IET, especially for the bonding mode through two O atoms of the carboxyl group.
界面吸附构型在影响染料敏化太阳能电池(DSSC)的光伏性能方面起着关键作用,因此,需要进行理论研究以进一步了解不同吸附构型对化学计量比和有缺陷的TiO2(101)表面上DSSC的短路光电流密度(JSC)和开路电压(VOC)的影响。在此,使用DFT和TD-DFT方法,对带有不同供体部分和α-氰基丙烯酸锚定基团(T1-3)的供体-π桥-受体(D-π-A)型卟啉敏化剂进行了孤立染料和染料/TiO2体系的计算。并且,首次对具有化学计量比和有缺陷表面的染料/TiO2体系进行了界面电子转移(IET)和态密度(DOS)的比较分析,以进一步深入了解影响DSSC效率的电子因素,这可以很好地解释JSC和VOC值的实验变化趋势。结果表明,与双齿连接相比,通过羧基和氰基以三齿结合模式连接可导致更高效的IET速率和导带向上移动。更有趣的是,我们发现含有O2c空位的有缺陷表面上的吸附构型会导致更多的导带底向上移动和相对较快的IET,特别是对于通过羧基的两个O原子的键合模式。