Lin Chun-Liang, Kawakami Naoya, Arafune Ryuichi, Minamitani Emi, Takagi Noriaki
Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan, Republic of China.
J Phys Condens Matter. 2020 Jun 3;32(24):243001. doi: 10.1088/1361-648X/ab777d.
Topological materials have become promising materials for next-generation devices by utilizing their exotic electronic states. Their exotic states caused by spin-orbital coupling usually locate on the surfaces or at the edges. Scanning tunneling spectroscopy (STS) is a powerful tool to reveal the local electronic structures of condensed matters. Therefore, STS provides us with an almost perfect method to access the exotic states of topological materials. In this topical review, we report the current investigations by several methods based on the STS technique for layered topological material from transition metal dichalcogenide Weyl semimetals (WTe and MoTe) to two dimensional topological insulators (layered bismuth and silicene). The electronic characteristics of these layered topological materials are experimentally identified.
拓扑材料通过利用其奇异的电子态，已成为下一代器件颇具前景的材料。由自旋轨道耦合引起的奇异态通常位于表面或边缘。扫描隧道谱（STS）是揭示凝聚态物质局部电子结构的有力工具。因此，STS为我们提供了一种几乎完美的方法来探究拓扑材料的奇异态。在本专题综述中，我们报告了目前基于STS技术通过多种方法对层状拓扑材料的研究，这些材料包括过渡金属二硫属化物外尔半金属（WTe和MoTe）到二维拓扑绝缘体（层状铋和硅烯）。实验确定了这些层状拓扑材料的电子特性。
