每秒超过1亿帧、具有逐像素沟槽电容器存储阵列的368帧全局快门突发式CMOS图像传感器。

Over 100 Million Frames per Second 368 Frames Global Shutter Burst CMOS Image Sensor with Pixel-wise Trench Capacitor Memory Array.

作者信息

Suzuki Manabu, Sugama Yuki, Kuroda Rihito, Sugawa Shigetoshi

机构信息

Graduate School of Engineering, Tohoku University, 6-6-11-811, Aza-Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579, Japan.

出版信息

Sensors (Basel). 2020 Feb 17;20(4):1086. doi: 10.3390/s20041086.

DOI:10.3390/s20041086

PMID:32079292

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC7070596/

Abstract

In this paper, a prototype ultra-high speed global shutter complementary metal-oxide-semiconductor (CMOS) image sensor with pixel-wise trench capacitor memory array achieving over 100 million frames per second (fps) with up to 368 record length by burst correlated double sampling (CDS) operation is presented. Over 100 Mfps high frame rate is obtained by reduction of pixel output load by the pixel-wise memory array architecture and introduction of the burst CDS operation which minimizes the pixel driving pulse transitions. Long record length is realized by high density analog memory integration with Si trench capacitors. A maximum 125 Mfps frame rate with up to 368 record length video capturing was confirmed under room temperature without any cooling system. The photoelectric conversion characteristics of the burst CDS operation were measured and compared with those of the conventional CDS operation.

摘要

本文提出了一种原型超高速全局快门互补金属氧化物半导体（CMOS）图像传感器，其具有逐像素沟槽电容器存储阵列，通过突发相关双采样（CDS）操作实现了超过1亿帧每秒（fps）的帧率以及高达368的记录长度。通过逐像素存储阵列架构降低像素输出负载，并引入突发CDS操作以最小化像素驱动脉冲转换，从而获得了超过100Mfps的高帧率。通过与硅沟槽电容器的高密度模拟存储器集成实现了长记录长度。在室温下且无任何冷却系统的情况下，确认了该传感器能够实现最高125Mfps的帧率以及高达368的记录长度的视频捕获。测量了突发CDS操作的光电转换特性，并与传统CDS操作的特性进行了比较。