Ma Dingtao, Wang Rui, Zhao Jinlai, Chen Qianyuan, Wu Leiming, Li Delong, Su Liumei, Jiang Xiantao, Luo Zhengqian, Ge Yanqi, Li Jianqing, Zhang Yupeng, Zhang Han
Faculty of Information Technology, Macau University of Science and Technology, Taipa, Macau SAR 999078, P. R. China.
Collaborative Innovation Center for Optoelectronic Science and Technology and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen 518060, P. R. China.
Nanoscale. 2020 Mar 5;12(9):5313-5323. doi: 10.1039/d0nr00005a.
Owing to their intriguing characteristics, the ongoing pursuit of emerging mono-elemental two-dimensional (2D) nanosheets beyond graphene is an exciting research area for next-generation applications. Herein, we demonstrate that highly crystalline 2D boron (B) nanosheets can be efficiently synthesized by employing a modified liquid phase exfoliation method. Moreover, carrier dynamics has been systematically investigated by using femtosecond time-resolved transient absorption spectroscopy, demonstrating an ultrafast recovery speed during carrier transfer. Based on these results, the optoelectronic performance of the as-synthesized 2D B nanosheets has been investigated by applying them in photoelectrochemical (PEC)-type and field effect transistor (FET)-type photodetectors. The experimental results revealed that the as-fabricated PEC device not only exhibited a favourable self-powered capability, but also a high photoresponsivity of 2.9-91.7 μA W-1 in the UV region. Besides, the FET device also exhibited a tunable photoresponsivity in the range of 174-281.3 μA W-1 under the irradiation of excited light at 405 nm. We strongly believe that the current work shall pave the path for successful utilization of 2D B nanosheets in electronic and optoelectronic devices. Moreover, the proposed method can be utilized to explore other mono-elemental 2D nanomaterials.
由于其引人入胜的特性，对除石墨烯之外的新兴单元素二维（2D）纳米片的持续探索是一个用于下一代应用的令人兴奋的研究领域。在此，我们证明了通过采用改进的液相剥离法可以高效合成高度结晶的二维硼（B）纳米片。此外，利用飞秒时间分辨瞬态吸收光谱系统地研究了载流子动力学，证明了载流子转移过程中的超快恢复速度。基于这些结果，通过将合成的二维硼纳米片应用于光电化学（PEC）型和场效应晶体管（FET）型光电探测器，研究了其光电性能。实验结果表明，制备的PEC器件不仅表现出良好的自供电能力，而且在紫外区域具有2.9 - 91.7 μA W-1的高光响应率。此外，FET器件在405 nm激发光照射下也表现出174 - 281.3 μA W-1范围内的可调光响应率。我们坚信当前的工作将为二维硼纳米片在电子和光电器件中的成功应用铺平道路。此外，所提出的方法可用于探索其他单元素二维纳米材料。
