Zheng Fu-Bao, Zhang Liang, Zhang Jin, Wang Pei-Ji, Zhang Chang-Wen
School of Physics and Technology, University of Jinan, Jinan, Shandong 250022, People's Republic of China.
Phys Chem Chem Phys. 2020 Mar 4;22(9):5163-5169. doi: 10.1039/c9cp06445a.
Opening up a band gap without lowering high carrier mobility in germanene and finding suitable substrate materials to form van der Waals heterostructures have recently emerged as an intriguing way of designing a new type of electronic devices. By using first-principles calculations, here, we systematically investigate the effect of the GaGeTe substrate on the electronic properties of monolayer germanene. Linear dichroism of the Dirac-cone like band dispersion and higher carrier mobility (9.7 × 103 cm2 V-1 s-1) in the Ge/GaGeTe heterostructure (HTS) are found to be preserved compared to that of free-standing germanene. Remarkably, the band structure of HTS can be flexibly modulated by applying bias voltage or strain. A prototype data storage device FET based on Ge/GaGeTe HTS is proposed, which presents a promising high performance platform with a tunable band gap and high carrier mobility.
在不降低锗烯高载流子迁移率的情况下打开带隙，并找到合适的衬底材料以形成范德华异质结构，最近已成为设计新型电子器件的一种有趣方法。在此，我们通过第一性原理计算，系统地研究了GaGeTe衬底对单层锗烯电子性质的影响。与独立锗烯相比，Ge/GaGeTe异质结构（HTS）中类狄拉克锥能带色散的线性二向色性和更高的载流子迁移率（9.7×103 cm2 V-1 s-1）得以保留。值得注意的是，HTS的能带结构可以通过施加偏置电压或应变进行灵活调制。我们提出了一种基于Ge/GaGeTe HTS的原型数据存储器件FET，它展示了一个具有可调带隙和高载流子迁移率的有前景的高性能平台。
