Lv Haiqin, Huang Ying, Koodali Ranjit T, Liu Guimei, Zeng Yubin, Meng Qingguo, Yuan Mingzhe
Shenyang Institute of Automation, Guangzhou, Chinese Academy of Science, Guangzhou 511400, PR China.
Guangdong Engineering and Technology Research Center for Environmental Purification and Functional Materials, Guangzhou 511400, PR China.
ACS Appl Mater Interfaces. 2020 Mar 18;12(11):12656-12667. doi: 10.1021/acsami.9b19057. Epub 2020 Mar 9.
Sulfur-doped two-dimensional (2D) graphitic carbon nitride nanosheets (2D-SCN) with efficient photocatalytic activity were synthesized via (1) polycondensation of thiourea to form bulk sulfur-doped graphitic carbon nitride (SCN) and (2) followed by thermal oxidative treatment of the prepared SCN via an etching strategy to form 2D-SCN. Sulfur was doped in situ into SCN by using thiourea as the precursor, and the 2D nanosheet structure was obtained during the thermal oxidative etching process. The structural, morphological, and optical properties of the 2D-SCN sample were investigated in detail. Herein, it is shown that the thermal oxidative etching treatment and sulfur doping induced a 2D nanosheet structure (2D-SCN-3h) with a thickness of about 4.0 nm and exposure of more sulfur elements on the surface. The surface area increased from 16.6 m/g for SCN to 226.9 m/g. Compared to bulk SCN, a blue shift of the absorption peaks was observed for the obtained 2D-SCN-3h photocatalyst, and the absorption intensity was higher than that of the sulfur-free counterpart (2D-CN). The successful in situ doping of S element into SCN or 2D-SCN-3h samples is beneficial to the introduction of surface N defects and O species. 2D-SCN-3h indicated higher efficiency in photogenerated charge carrier separation and showed the highest reductive activity in photocatalytic splitting of water at a rate of 127.4 μmol/h under simulated solar light irradiation, which was 250 times and 3 times higher than that of SCN and 2D-CN photocatalysts, respectively. The apparent quantum efficiency was estimated to be 8.35% at 420 nm irradiation. The S-C-N bond formed by sulfur doping was beneficial to the charge-transfer process, and this led to higher photocatalytic activity according to partial density of state analysis computed by first-principles methods.
通过以下步骤合成了具有高效光催化活性的硫掺杂二维(2D)石墨相氮化碳纳米片(2D-SCN):(1)硫脲缩聚形成块状硫掺杂石墨相氮化碳(SCN);(2)然后通过蚀刻策略对制备的SCN进行热氧化处理以形成2D-SCN。以硫脲为前驱体将硫原位掺杂到SCN中,并在热氧化蚀刻过程中获得二维纳米片结构。详细研究了2D-SCN样品的结构、形态和光学性质。在此表明,热氧化蚀刻处理和硫掺杂诱导形成了厚度约为4.0 nm的二维纳米片结构(2D-SCN-3h),且表面有更多硫元素暴露。表面积从SCN的16.6 m²/g增加到226.9 m²/g。与块状SCN相比,所得的2D-SCN-3h光催化剂的吸收峰发生蓝移,且吸收强度高于无硫对应物(2D-CN)。S元素成功原位掺杂到SCN或2D-SCN-3h样品中有利于引入表面N缺陷和O物种。2D-SCN-3h在光生电荷载流子分离方面表现出更高的效率,并且在模拟太阳光照射下光催化分解水的还原活性最高,速率为127.4 μmol/h,分别比SCN和2D-CN光催化剂高250倍和3倍。在420 nm照射下,表观量子效率估计为8.35%。通过硫掺杂形成的S-C-N键有利于电荷转移过程,根据第一性原理方法计算的部分态密度分析,这导致了更高的光催化活性。