Stehno Martin P, Ngabonziza Prosper, Myoren Hiroaki, Brinkman Alexander
Faculty of Science and Technology and MESA+ Institute for Nanotechnology, University of Twente, 7500 AE, Enschede, The Netherlands.
Physikalisches Institut EP3, University of Würzburg, Am Hubland, 97070, Würzburg, Germany.
Adv Mater. 2020 Apr;32(14):e1908351. doi: 10.1002/adma.201908351. Epub 2020 Feb 24.
Thin layers of topological insulator materials are quasi-2D systems featuring a complex interplay between quantum confinement and topological band structure. To understand the role of the spatial distribution of carriers in electrical transport, the Josephson effect, magnetotransport, and weak anti-localization are studied in bottom-gated thin Bi Te topological insulator films. The experimental carrier densities are compared to a model based on the solutions of the self-consistent Schrödinger-Poisson equations and they are in excellent agreement. The modeling allows for a quantitative interpretation of the weak antilocalization correction to the conduction and of the critical current of Josephson junctions with weak links made from such films without any ad hoc assumptions.
拓扑绝缘体材料的薄层是准二维系统，具有量子限制和拓扑能带结构之间的复杂相互作用。为了理解载流子空间分布在电输运、约瑟夫森效应、磁输运和弱反局域化中的作用，对底部栅极的薄BiTe拓扑绝缘体薄膜中的这些现象进行了研究。将实验得到的载流子密度与基于自洽薛定谔-泊松方程解的模型进行了比较，二者吻合得非常好。该模型能够对由这类薄膜制成的具有弱连接的约瑟夫森结的传导的弱反局域化修正和临界电流进行定量解释，而无需任何特设假设。
