Volokitin A I, Persson B N J
Samara State Technical University, Molodogvardeiskaya Str. 244, 443100 Samara, Russia. Peter Grünberg Institut, Forschungszentrum Jülich, D-52425, Germany.
J Phys Condens Matter. 2020 Jun 10;32(25):255301. doi: 10.1088/1361-648X/ab79f8.
We calculate heat transfer between a 2D sheet (e.g. graphene) and a dielectric in presence of a gate voltage. The gate potential induces surface charge densities on the sheet and dielectric, which results in electric field, which is coupled to the surface displacements and, as a consequence, resulting an additional contributions to the radiative heat transfer. The electrostatic and van der Waals interactions between the surface displacement result in the phonon heat transfer, which we calculate taking into account the nonlocality of these interactions. Numerical calculations are presented for heat transfer between graphene and a SiO substrate.
我们计算了二维薄片（如石墨烯）与电介质之间在存在栅极电压时的热传递。栅极电势在薄片和电介质上诱导出表面电荷密度，这会产生电场，该电场与表面位移耦合，从而对辐射热传递产生额外贡献。表面位移之间的静电和范德华相互作用导致了声子热传递，我们在计算时考虑了这些相互作用的非局部性。给出了石墨烯与SiO衬底之间热传递的数值计算结果。
