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本征三维狄拉克半金属砷化镉中的漂移速度饱和与大电流密度

Drift velocity saturation and large current density in intrinsic three-dimensional Dirac semimetal cadmium arsenide.

作者信息

Kubakaddi S S

机构信息

Department of Physics, K. L. E. Technological University, Hubballi-580031, Karnataka, India.

出版信息

J Phys Condens Matter. 2020 Jun 17;32(26):265701. doi: 10.1088/1361-648X/ab7a4c.

DOI:10.1088/1361-648X/ab7a4c
PMID:32101793
Abstract

Transport of electrons at high electric fields is investigated in intrinsic three-dimensional Dirac semimetal cadmium arsenide, considering the scattering of electrons from acoustic and optical phonons. Screening and hot phonon effect are taken in to account. Expressions for the hot electron mobility μ and power loss P are obtained as a function of electron temperature T . The dependence of drift velocity v on electric field E and electron density n has been studied. Hot phonon effect is found to set in the saturation of v at relatively low E and to significantly degrade its magnitude. The drift velocity is found to saturate at a value v ∼ 10 cm s and it is weakly dependent on n . A large saturation current density ∼ 10 A cm is predicted.

摘要

在本征三维狄拉克半金属砷化镉中研究了高电场下电子的输运,考虑了电子与声学声子和光学声子的散射。计入了屏蔽和热声子效应。得到了热电子迁移率μ和功率损耗P随电子温度T变化的表达式。研究了漂移速度v与电场E和电子密度n的关系。发现热声子效应在相对较低的电场下使v达到饱和,并显著降低其大小。发现漂移速度在v ∼ 10 cm/s的值处达到饱和,并且它对n的依赖性较弱。预测了一个较大的饱和电流密度 ∼ 10 A/cm。

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