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硅量子点湿化学氧化合成的批判性评估

Critical assessment of wet-chemical oxidation synthesis of silicon quantum dots.

作者信息

Wilbrink Jonathan L, Huang Chia-Ching, Dohnalova Katerina, Paulusse Jos M J

机构信息

Department of Biomolecular Nanotechnology, MESA+ Institute for Nanotechnology, TechMed Institute for Health and Biomedical Technologies, Faculty of Science and Technology, University of Twente, P.O. Box 217, Enschede, 7500 AE, The Netherlands.

出版信息

Faraday Discuss. 2020 Jun 19;222(0):149-165. doi: 10.1039/c9fd00099b.

DOI:10.1039/c9fd00099b
PMID:32104860
Abstract

Wet-chemical synthetic procedures are powerful strategies to afford fluorescent silicon quantum dots (Si QDs) in a versatile and scalable manner. However, development of Si QDs is still hampered by a lack of control over photoluminescence emission, in addition to synthesis and characterization complexities. The wet-chemical Si QD synthesis by oxidation of magnesium silicide (Mg2Si) with bromine (Br2) was revisited and a control reaction was carried out where the silicon source was omitted. Both reaction conditions resulted in substantial quantities of fluorescent material. Moreover, a comparative analysis of their optical properties (UV-vis/fluorescence) revealed no apparent differences. Other characterization techniques also confirmed the resemblance of the two materials as 1H NMR, FTIR and XPS spectra were nearly identical for both samples. Elemental analysis revealed the presence of only 2 wt% silicon in the Si QD sample. No evidence was found for the formation of significant amounts of Si QDs via this wet-chemical procedure.

摘要

湿化学合成方法是一种强大的策略,能够以通用且可扩展的方式制备荧光硅量子点(Si QDs)。然而,除了合成和表征的复杂性之外,Si QDs的发展仍然受到光致发光发射缺乏控制的阻碍。重新研究了通过用溴(Br2)氧化硅化镁(Mg2Si)来进行湿化学Si QD合成,并进行了一个省略硅源的对照反应。两种反应条件都产生了大量的荧光材料。此外,对它们的光学性质(紫外可见/荧光)进行的比较分析没有发现明显差异。其他表征技术也证实了这两种材料的相似性,因为两个样品的1H NMR、FTIR和XPS光谱几乎相同。元素分析表明,Si QD样品中仅存在2 wt%的硅。没有发现通过这种湿化学方法形成大量Si QDs的证据。

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