Tang Chaolong, Zhang Zhaowei, Lai Shen, Tan Qinghai, Gao Wei-Bo
Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore.
The Photonics Institute and Centre for Disruptive Photonic Technologies, Nanyang Technological University, Singapore, 637371, Singapore.
Adv Mater. 2020 Apr;32(16):e1908498. doi: 10.1002/adma.201908498. Epub 2020 Mar 4.
2D van der Waals heterostructures serve as a promising platform to exploit various physical phenomena in a diverse range of novel spintronic device applications. Efficient spin injection is the prerequisite for these devices. The recent discovery of magnetic 2D materials leads to the possibility of fully 2D van der Waals spintronics devices by implementing spin injection through the magnetic proximity effect (MPE). Here, the investigation of MPE in 2D graphene/CrBr van der Waals heterostructures is reported, which is probed by the Zeeman spin Hall effect through non-local measurements. Quantitative estimation of the Zeeman splitting field demonstrates a significant MPE field even in a low magnetic field. Furthermore, the observed anomalous longitudinal resistance changes at the Dirac point R with increasing magnetic field near ν = 0 may be attributed to the MPE-induced new ground state phases. This MPE revealed in the graphene/CrBr van der Waals heterostructures therefore provides a solid physics basis and key functionality for next-generation 2D spin logic and memory devices.
二维范德华异质结构是一个很有前景的平台,可用于在各种新型自旋电子器件应用中探索各种物理现象。高效的自旋注入是这些器件的先决条件。磁性二维材料的最新发现使得通过磁近邻效应(MPE)实现自旋注入从而制造全二维范德华自旋电子器件成为可能。在此,报告了对二维石墨烯/CrBr范德华异质结构中MPE的研究,该研究通过非局域测量利用塞曼自旋霍尔效应进行探测。塞曼分裂场的定量估计表明,即使在低磁场中也存在显著的MPE场。此外,在狄拉克点R处观察到的随着磁场增加(在ν≈0附近)异常纵向电阻变化可能归因于MPE诱导的新基态相。因此,在石墨烯/CrBr范德华异质结构中揭示的这种MPE为下一代二维自旋逻辑和存储器件提供了坚实的物理基础和关键功能。