Liu Feng, Jiang Junke, Zhang Yaohong, Ding Chao, Toyoda Taro, Hayase Shuzi, Wang Ruixiang, Tao Shuxia, Shen Qing
Faculty of Informatics and Engineering, The University of Electro-Communications, 1-5-1 Chofugaoka, Tokyo, 182-8585, Japan.
Department of Applied Physics, Eindhoven University of Technology, Eindhoven, 5600 MB, The Netherlands.
Angew Chem Int Ed Engl. 2020 May 25;59(22):8421-8424. doi: 10.1002/anie.201916020. Epub 2020 Mar 24.
Phase-stable CsSn Pb I perovskite quantum dots (QDs) hold great promise for optoelectronic applications owing to their strong response in the near-infrared region. Unfortunately, optimal utilization of their potential is limited by the severe photoluminescence (PL) quenching, leading to extremely low quantum yields (QYs) of approximately 0.3 %. The ultra-low sodium (Na) doping presented herein is found to be effective in improving PL QYs of these alloyed QDs without alerting their favourable electronic structure. X-ray photoelectron spectroscopy (XPS) studies suggest the formation of a stronger chemical interaction between I and Sn ions upon Na doping, which potentially helps to stabilize Sn and suppresses the formation of I vacancy defects. The optimized PL QY of the Na-doped QDs reaches up to around 28 %, almost two orders of magnitude enhancement compared with the pristine one.
相稳定的CsSnPbI钙钛矿量子点(QDs)由于其在近红外区域的强烈响应,在光电子应用方面具有巨大潜力。不幸的是,其潜力的最佳利用受到严重的光致发光(PL)猝灭的限制,导致量子产率(QYs)极低,约为0.3%。本文提出的超低钠(Na)掺杂被发现可有效提高这些合金量子点的PL QYs,而不会改变其良好的电子结构。X射线光电子能谱(XPS)研究表明,Na掺杂后I和Sn离子之间形成了更强的化学相互作用,这可能有助于稳定Sn并抑制I空位缺陷的形成。Na掺杂量子点的优化PL QY高达约28%,与原始量子点相比提高了近两个数量级。