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光强依赖的半导体-助催化剂界面电子转移:阳光驱动光催化的一个困境

Light-Intensity-Dependent Semiconductor-Cocatalyst Interfacial Electron Transfer: A Dilemma of Sunlight-Driven Photocatalysis.

作者信息

Wang Zhijian, Qiao Wei, Yuan Mi, Li Na, Chen Jiazang

机构信息

State Key Laboratory of Coal Conversion, Institute of Coal Chemistry, Chinese Academy of Sciences, Taiyuan 030001, China.

Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.

出版信息

J Phys Chem Lett. 2020 Mar 19;11(6):2369-2373. doi: 10.1021/acs.jpclett.0c00315. Epub 2020 Mar 10.

Abstract

In photocatalytic reactions, the interfacial transfer of electrons from semiconductor nanostructures to cocatalysts is the key step that determines the utilization of photogenerated charges and is sensitively influenced by the behaviors of this electronic process. Under weak illumination, photocatalytic reaction rates deviate from linearity to incident light intensity ( = ·, with α → 0.5), because charge recombination predominates interfacial transfer. When the irradiation intensity is high, theoretically, thermionic emission would be the major electronic process ( = ·, with α → 2). The ratio of photocatalytic reaction rate to incident light intensity that mainly reflects the energy utilization would encounter a minimum along the variation of irradiation intensity. This crucial relationship, however, has hardly been consciously considered. In this work, inspired by theoretical simulation, we demonstrate that sunlight-driven photocatalysis is generally on the bottom of the energy utilization curves for certain common semiconductors (CdS, TiO, or CN).

摘要

在光催化反应中,电子从半导体纳米结构到助催化剂的界面转移是决定光生电荷利用率的关键步骤,并且受到该电子过程行为的敏感影响。在弱光照下,光催化反应速率与入射光强度的关系偏离线性(=·,α→0.5),因为电荷复合在界面转移中占主导。当照射强度较高时,理论上热电子发射将是主要的电子过程(=·,α→2)。主要反映能量利用情况的光催化反应速率与入射光强度之比将随着照射强度的变化而出现最小值。然而,这一关键关系几乎从未被有意识地考虑过。在这项工作中,受理论模拟的启发,我们证明对于某些常见半导体(硫化镉、二氧化钛或氮化碳),阳光驱动的光催化通常处于能量利用曲线的底部。

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