Singh Abhishek, Pashkin Alexej, Winnerl Stephan, Welsch Malte, Beckh Cornelius, Sulzer Philipp, Leitenstorfer Alfred, Helm Manfred, Schneider Harald
1Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328 Dresden, Germany.
2Cfaed and Institute of Applied Physics, TU Dresden, 01062 Dresden, Germany.
Light Sci Appl. 2020 Mar 3;9:30. doi: 10.1038/s41377-020-0265-4. eCollection 2020.
Phase-stable electromagnetic pulses in the THz frequency range offer several unique capabilities in time-resolved spectroscopy. However, the diversity of their application is limited by the covered spectral bandwidth. In particular, the upper frequency limit of photoconductive emitters - the most widespread technique in THz spectroscopy - reaches only up to 7 THz in the regular transmission mode due to absorption by infrared-active optical phonons. Here, we present ultrabroadband (extending up to 70 THz) THz emission from an Au-implanted Ge emitter that is compatible with mode-locked fibre lasers operating at wavelengths of 1.1 and 1.55 μm with pulse repetition rates of 10 and 20 MHz, respectively. This result opens up the possibility for the development of compact THz photonic devices operating up to multi-THz frequencies that are compatible with Si CMOS technology.
太赫兹频率范围内的相位稳定电磁脉冲在时间分辨光谱学中具有多种独特功能。然而，其应用的多样性受到所覆盖光谱带宽的限制。特别是，光电导发射器是太赫兹光谱学中最广泛使用的技术，由于红外活性光学声子的吸收，其在常规传输模式下的上限频率仅达到7太赫兹。在此，我们展示了来自金离子注入锗发射器的超宽带（高达70太赫兹）太赫兹发射，该发射器与分别工作在波长1.1和1.55微米、脉冲重复率为10和20兆赫兹的锁模光纤激光器兼容。这一结果为开发与硅互补金属氧化物半导体技术兼容的、工作频率高达多太赫兹的紧凑型太赫兹光子器件开辟了可能性。
