Obraztsov Petr A, Bulgakova Vladislava V, Chizhov Pavel A, Ushakov Alexander A, Gets Dmitry S, Makarov Sergey V, Bukin Vladimir V
Prokhorov General Physics Institute of the Russian Academy of Sciences, 119991 Moscow, Russia.
Department of Physics and Engineering, ITMO University, 197101 St. Petersburg, Russia.
Nanomaterials (Basel). 2021 Jan 26;11(2):313. doi: 10.3390/nano11020313.
Hybrid organic-inorganic perovskites, while well examined for photovoltaic applications, remain almost completely unexplored in the terahertz (THz) range. These low-cost hybrid materials are extremely attractive for THz applications because their optoelectronic properties can be chemically engineered with relative ease. Here, we experimentally demonstrate the first attempt to apply solution-processed polycrystalline films of hybrid perovskites for the development of photoconductive terahertz emitters. By using the widely studied methylammonium-based perovskites MAPbI and MAPbBr, we fabricate and characterize large-aperture photoconductive antennas. The work presented here examines polycrystalline perovskite films excited both above and below the bandgap, as well as the scaling of THz emission with the applied bias field and the optical excitation fluence. The combination of ultrafast time-resolved spectroscopy and terahertz emission experiments allows us to determine the still-debated room temperature carrier lifetime and mobility of charge carriers in halide perovskites using an alternative noninvasive method. Our results demonstrate the applicability of hybrid perovskites for the development of scalable THz photoconductive devices, making these materials competitive with conventional semiconductors for THz emission.
有机-无机杂化钙钛矿虽然在光伏应用方面已得到充分研究,但在太赫兹(THz)波段几乎仍完全未被探索。这些低成本的杂化材料对太赫兹应用极具吸引力,因为它们的光电特性可以相对容易地通过化学方法进行调控。在此,我们通过实验首次尝试将溶液处理的杂化钙钛矿多晶薄膜应用于光导太赫兹发射器的开发。通过使用广泛研究的基于甲胺的钙钛矿MAPbI和MAPbBr,我们制备并表征了大孔径光导天线。本文的工作研究了在带隙之上和之下激发的多晶钙钛矿薄膜,以及太赫兹发射随施加偏置场和光激发通量的缩放情况。超快时间分辨光谱学和太赫兹发射实验的结合使我们能够使用一种替代的非侵入性方法确定卤化物钙钛矿中仍存在争议的室温载流子寿命和载流子迁移率。我们的结果证明了杂化钙钛矿在可扩展太赫兹光导器件开发中的适用性,使这些材料在太赫兹发射方面与传统半导体具有竞争力。