Pattison Thomas G, Hess Alexander E, Arellano Noel, Lanzillo Nicholas, Nguyen Son, Bui Holt, Rettner Charles, Truong Hoa, Friz Alexander, Topuria Teya, Fong Anthony, Hughes Brian, Tek Andy T, DeSilva Anuja, Miller Robert D, Qiao Greg G, Wojtecki Rudy J
Polymer Science Group, Department of Chemical Engineering, The University of Melbourne, Parkville, VIC 3010, Australia.
International Business Machines - Almaden Research Center, 650 Harry Road, San Jose, California 95120, United States.
ACS Nano. 2020 Apr 28;14(4):4276-4288. doi: 10.1021/acsnano.9b09637. Epub 2020 Mar 18.
The area selective growth of polymers and their use as inhibiting layers for inorganic film depositions may provide a valuable self-aligned process for fabrication. Polynorbornene (PNB) thin films were grown from surface-bound initiators and show inhibitory properties against the atomic layer deposition (ALD) of ZnO and TiO. Area selective control of the polymerization was achieved through the synthesis of initiators that incorporate surface-binding ligands, enabling their selective attachment to metal oxide features silicon dielectrics, which were then used to initiate surface polymerizations. The subsequent use of these films in an ALD process enabled the area selective deposition (ASD) of up to 39 nm of ZnO. In addition, polymer thickness was found to play a key role, where films that underwent longer polymerization times were more effective at inhibiting higher numbers of ALD cycles. Finally, while the ASD of a TiO film was not achieved despite blanket studies showing inhibition, the ALD deposition on polymer regions of a patterned film produced a different quality metal oxide and therefore altered its etch resistance. This property was exploited in the area selective etch of a metal feature. This demonstration of an area selective surface-grown polymer to enable ASD and selective etch has implications for the fabrication of both micro- and nanoscale features and surfaces.
聚合物的区域选择性生长及其作为无机膜沉积抑制层的用途可为制造提供一种有价值的自对准工艺。聚降冰片烯(PNB)薄膜由表面结合引发剂生长而成,并对ZnO和TiO的原子层沉积(ALD)表现出抑制特性。通过合成包含表面结合配体的引发剂实现了聚合的区域选择性控制,使其能够选择性地附着于金属氧化物特征——硅电介质上,然后用于引发表面聚合反应。在ALD工艺中使用这些薄膜能够实现高达39nm的ZnO区域选择性沉积(ASD)。此外,发现聚合物厚度起着关键作用,聚合时间更长的薄膜在抑制更多ALD循环方面更有效。最后,尽管全面研究表明存在抑制作用,但未实现TiO薄膜的ASD,不过在图案化薄膜的聚合物区域上进行ALD沉积产生了质量不同的金属氧化物,因此改变了其抗蚀刻性。这种特性被用于金属特征的区域选择性蚀刻。这种区域选择性表面生长聚合物实现ASD和选择性蚀刻的演示对微米和纳米级特征及表面的制造具有重要意义。