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过渡金属二硫属化物异质结构中与扭转角相关的原子重构和莫尔条纹图案

Twist Angle-Dependent Atomic Reconstruction and Moiré Patterns in Transition Metal Dichalcogenide Heterostructures.

作者信息

Rosenberger Matthew R, Chuang Hsun-Jen, Phillips Madeleine, Oleshko Vladimir P, McCreary Kathleen M, Sivaram Saujan V, Hellberg C Stephen, Jonker Berend T

机构信息

U.S. Naval Research Laboratory, Washington, DC 20375, United States.

National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States.

出版信息

ACS Nano. 2020 Apr 28;14(4):4550-4558. doi: 10.1021/acsnano.0c00088. Epub 2020 Mar 20.

Abstract

Van der Waals layered materials, such as transition metal dichalcogenides (TMDs), are an exciting class of materials with weak interlayer bonding, which enables one to create so-called van der Waals heterostructures (vdWH). One promising attribute of vdWH is the ability to rotate the layers at arbitrary azimuthal angles relative to one another. Recent work has shown that control of the twist angle between layers can have a dramatic effect on TMD vdWH properties, but the twist angle has been treated solely through the use of rigid-lattice moiré patterns. No atomic reconstruction, that is, any rearrangement of atoms within the individual layers, has been reported experimentally to date. Here, we demonstrate that vdWH of MoSe/WSe and MoS/WS at twist angles ≤1° undergo significant atomic level reconstruction leading to discrete commensurate domains divided by narrow domain walls, rather than a smoothly varying rigid-lattice moiré pattern as has been assumed in prior experimental work. Using conductive atomic force microscopy (CAFM), we show that TMD vdWH at small twist angles exhibit large domains of constant conductivity. The domains in samples with R-type stacking are triangular, whereas the domains in samples with H-type stacking are hexagonal. Transmission electron microscopy provides additional evidence of atomic reconstruction in MoSe/WSe structures and demonstrates the transition between a rigid-lattice moiré pattern for large angles and atomic reconstruction for small angles. We use density functional theory to calculate the band structures of the commensurate reconstructed domains and find that the modulation of the relative electronic band edges is consistent with the CAFM results and photoluminescence spectra. The presence of atomic reconstruction in TMD heterostructures and the observed impact on nanometer-scale electronic properties provide fundamental insight into the behavior of this important class of heterostructures.

摘要

范德华层状材料,如过渡金属二硫属化物(TMDs),是一类令人兴奋的材料,其层间键合较弱,这使得人们能够创建所谓的范德华异质结构(vdWH)。vdWH的一个有前景的特性是各层能够相对于彼此以任意方位角旋转。最近的研究表明,控制层间的扭转角会对TMD vdWH的性质产生显著影响,但扭转角一直仅通过使用刚性晶格莫尔图案来处理。迄今为止,尚未有实验报道过任何原子重构,即单个层内原子的任何重新排列。在这里,我们证明,扭转角≤1°的MoSe/WSe和MoS/WS的vdWH会经历显著的原子级重构,导致离散的共格畴被狭窄的畴壁分隔,而不是像先前实验工作中所假设的那样是平滑变化的刚性晶格莫尔图案。使用导电原子力显微镜(CAFM),我们表明小扭转角的TMD vdWH呈现出具有恒定电导率的大畴。具有R型堆叠的样品中的畴是三角形的,而具有H型堆叠的样品中的畴是六边形的。透射电子显微镜为MoSe/WSe结构中的原子重构提供了额外证据,并证明了大角度时刚性晶格莫尔图案与小角度时原子重构之间的转变。我们使用密度泛函理论来计算共格重构畴的能带结构,发现相对电子带边的调制与CAFM结果和光致发光光谱一致。TMD异质结构中原子重构的存在以及观察到的对纳米尺度电子性质的影响,为这类重要异质结构的行为提供了基本见解。

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