Multilayer transition metal dichalcogenides (ML-TMDs) with commensurate, incommensurate, and reconstructed structures, have emerged as a class of 2D materials with unique properties that differ significantly from their monolayer counterparts. While previous research has focused on monolayers, the discovery of various novel properties has sparked interest in multilayers with diverse structures engineered through stacking. These materials are characterized by interactions between layers and exhibit remarkable tunability in their structural, optical, and electronic behaviors depending on stacking order, twist angle, and interlayer coupling. This review provides an overview of ML-TMDs and explores their properties such as electronic band structure, optical responses, ferroelectricity, and anomalous Hall effect. Various synthetic methods employed to fabricate ML-TMDs, including mechanical stacking and chemical vapor deposition techniques, with an emphasis on achieving precise control of the twist angles and layer configurations, are discussed. This study further explores potential applications of ML-TMDs in nanoelectronics, optoelectronics, and quantum devices, where their unique properties can be harnessed for next-generation technologies. The critical role played by these materials in the development of future electronic and quantum devices is highlighted.