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基于环境后金属退火和恒压应力的AlO/ZrO及AlO/HfO双层膜的边界陷阱特性

Border Trap Characterizations of AlO/ZrO and AlO/HfO Bilayer Films Based on Ambient Post Metal Annealing and Constant Voltage Stress.

作者信息

Rahman Md Mamunur, Kim Dae-Hyun, Kim Tae-Woo

机构信息

School of Science and Engineering, Department of EEE, Canadian University of Bangladesh, Dhaka 1213, Bangladesh.

School of Electrical Engineering, University of Ulsan, Ulsan 44610, Korea.

出版信息

Nanomaterials (Basel). 2020 Mar 15;10(3):527. doi: 10.3390/nano10030527.

DOI:10.3390/nano10030527
PMID:32183413
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC7153472/
Abstract

This study represents a comparison of the border trap behavior and reliability between HfO and ZrO films on -InGaAs with an AlO interfacial layer. The effect of different post metal annealing conditions on the trap response was analyzed and it was found that the N:H mixed FGA passivates the border trap quite well, whereas N-based RTA performs better on interface traps. AlO/HfO showed more degradation in terms of the threshold voltage shift while AlO/ZrO showed higher leakage current behavior. Moreover, AlO/ZrO showed a higher permittivity, hysteresis, and breakdown field than AlO/HfO.

摘要

本研究对具有AlO界面层的-InGaAs上的HfO和ZrO薄膜之间的边界陷阱行为和可靠性进行了比较。分析了不同金属后退火条件对陷阱响应的影响，发现N:H混合快速热退火（FGA）能很好地钝化边界陷阱，而基于N的快速热退火（RTA）在界面陷阱方面表现更好。就阈值电压偏移而言，AlO/HfO表现出更多退化，而AlO/ZrO表现出更高的漏电流行为。此外，AlO/ZrO比AlO/HfO表现出更高的介电常数、滞后和击穿场。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3ff6/7153472/f9bdae35b344/nanomaterials-10-00527-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3ff6/7153472/1ed33375ce05/nanomaterials-10-00527-g001a.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3ff6/7153472/24bda27ab309/nanomaterials-10-00527-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3ff6/7153472/22d5f3d5f5c6/nanomaterials-10-00527-g003a.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3ff6/7153472/abdc8e91ae14/nanomaterials-10-00527-g004a.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3ff6/7153472/f9bdae35b344/nanomaterials-10-00527-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3ff6/7153472/1ed33375ce05/nanomaterials-10-00527-g001a.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3ff6/7153472/24bda27ab309/nanomaterials-10-00527-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3ff6/7153472/22d5f3d5f5c6/nanomaterials-10-00527-g003a.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3ff6/7153472/abdc8e91ae14/nanomaterials-10-00527-g004a.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3ff6/7153472/f9bdae35b344/nanomaterials-10-00527-g005.jpg

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2
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3
Electrical properties and thermal stability in stack structure of HfO/AlO/InSb by atomic layer deposition.
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AlO Passivation Effect in HfO·AlO Laminate Structures Grown on InP Substrates.AlO 钝化效应在 HfO·AlO 叠层结构中 InP 衬底上的生长。
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