Krakhalev Mikhail N, Prishchepa Oxana O, Sutormin Vitaly S, Bikbaev Rashid G, Timofeev Ivan V, Zyryanov Victor Ya
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russia.
Institute of Engineering Physics and Radio Electronics, Siberian Federal University, Krasnoyarsk, 660041, Russia.
Sci Rep. 2020 Mar 17;10(1):4907. doi: 10.1038/s41598-020-61713-9.
Electric-field-induced changes of the orientational structures of cholesteric liquid crystal layer with the tangential-conical boundary conditions have been investigated. The samples with the ratio of the cholesteric layer thickness d to the helix pitch p equalled to 0.57 have been considered. The perpendicularly applied electric field causes a decrease of the azimuthal director angle at the substrate with the conical surface anchoring. In the cells with d = 22 μm, the defect loops having the under-twisted and over-twisted areas are formed. At the defect loop the pair of point peculiarities is observed where the 180° jump of azimuthal angle of the director occurs. Under the action of electric field the loops shrink and disappear. In the cells with d = 13 μm, the over-twisted and under-twisted defect lines are formed. Applied voltage results in the shortening of lines or/and their transformation into a defect of the third type. The director field distribution near defect lines of three types has been investigated by the polarising microscopy techniques. It has been revealed that the length ratio between the over-twisted and third-type defect lines can be controlled by the electric field.
研究了在切向-锥形边界条件下电场诱导的胆甾相液晶层取向结构的变化。考虑了胆甾相层厚度d与螺旋节距p之比等于0.57的样品。垂直施加的电场会导致具有锥形表面锚定的基板处方位角指向矢角减小。在d = 22μm的液晶盒中,形成了具有欠扭曲和过扭曲区域的缺陷环。在缺陷环处观察到一对点奇异性,其中指向矢的方位角发生180°跳跃。在电场作用下,环收缩并消失。在d = 13μm的液晶盒中,形成了过扭曲和欠扭曲缺陷线。施加电压会导致线缩短或/和它们转变为第三类缺陷。通过偏振显微镜技术研究了三种类型缺陷线附近的指向矢场分布。结果表明,过扭曲和第三类缺陷线之间的长度比可以通过电场控制。