Kim Tae In, Park Ick-Joon, Choi Sung-Yool
School of Electrical Engineering, Graphene/2D Materials Research Center, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea.
Nano Lett. 2020 May 13;20(5):3740-3746. doi: 10.1021/acs.nanolett.0c00735. Epub 2020 Apr 6.
Transition metal dichalcogenides (TMDs) have attracted great interest owing to their fascinating properties with atomically thin nature. Although TMDs have been exploited for diverse applications, the effective role of TMDs in the synthesis of metal nanowires has not been explored. Here, we propose a new approach to synthesize ultrathin metal nanowires using TMDs for the first time. High-quality ultrathin nanowires with an average diameter of 11.3 nm are successfully synthesized for realizing high-performance transparent conductors that exhibit excellent conductivity and transparency with low haze. The growth mechanism is carefully investigated using high-resolution transmission electron microscopy, and growth of nanowires with tunable diameters is achieved by controlling the nanosheet dimension. Finally, we unravel the important role of TMDs acting as both reducing and nucleating agents. Therefore, our work provides a new strategy of the TMD as an innovative material for the growth of metal nanowires as a promising building block in next-generation optoelectronics.
过渡金属二硫属化物（TMDs）因其具有原子级薄的特性所展现出的迷人性质而备受关注。尽管TMDs已被用于多种应用，但它们在金属纳米线合成中的有效作用尚未得到探索。在此，我们首次提出一种使用TMDs合成超薄金属纳米线的新方法。成功合成了平均直径为11.3 nm的高质量超薄纳米线，以实现具有优异导电性和透明度且低雾度的高性能透明导体。利用高分辨率透射电子显微镜仔细研究了生长机制，并通过控制纳米片尺寸实现了直径可调的纳米线生长。最后，我们揭示了TMDs作为还原剂和成核剂的重要作用。因此，我们的工作提供了一种新策略，即将TMD作为一种创新材料用于金属纳米线的生长，金属纳米线是下一代光电子学中一种很有前景的构建块。
