Feng Jingjing, Zhu Wei, Zhang Zhiwei, Cao Lili, Yu Yuedong, Deng Yuan
School of Materials Science and Engineering, Beihang University, Beijing 100083, China.
Beijing Advanced Innovation Center for Biomedical Engineering, Beihang University, Beijing 100083, China.
ACS Appl Mater Interfaces. 2020 Apr 8;12(14):16630-16638. doi: 10.1021/acsami.0c01049. Epub 2020 Mar 27.
The application of screen-printed thin-film thermoelectric (TE) devices is still in its infancy, mainly due to low TE performance of screen-printed films and especially the poor electrical transport properties. Herein, we design and prepare a high-performance screen-printed BiTe film through introducing excessive Te-based nanosolder (Te-NS) to simultaneously realize the conduction channel construction and defect control. On one hand, the promoted carrier migration makes the electrical conductivity dramatically rise about 7 times, with a maximum power factor of 4.65 μW cm K . Meanwhile, the defect formation mechanism in the screen-printed BiTe film after the introduction of Te-NS is also in-depth studied, and the bipolar conduction is reduced by increased generation of and/or more suppression of , resulting in a postponed temperature of the maximum Seebeck coefficient. Hence, the large engineering power factor is achieved with excellent temperature linearity, indicating a possibility of screen-printed film application in a large temperature region. A TE device with a single leg has been fabricated to further demonstrate the generation validity. An open-circuit voltage of 11.34 mV and a maximum output power of 27.1 μW at a temperature gradient of 105 K have been achieved over a wide temperature range from 303 to 478 K. This study provides a theoretical and practical basis for the performance improvement of screen-printed TE films and devices.
丝网印刷薄膜热电（TE）器件的应用仍处于起步阶段，主要原因是丝网印刷薄膜的热电性能较低，尤其是其电输运性能较差。在此，我们通过引入过量的碲基纳米焊料（Te-NS）来设计并制备高性能的丝网印刷BiTe薄膜，以同时实现导电通道构建和缺陷控制。一方面，载流子迁移的促进使电导率显著提高约7倍，最大功率因数达到4.65 μW cm K 。同时，对引入Te-NS后丝网印刷BiTe薄膜中的缺陷形成机制也进行了深入研究，通过增加 的生成和/或更多地抑制 来降低双极传导，从而使最大塞贝克系数的温度延迟出现。因此，实现了具有优异温度线性的大工程功率因数，表明丝网印刷薄膜在大温度范围内应用的可能性。制备了单腿TE器件以进一步证明发电的有效性。在303至478 K的宽温度范围内，在105 K的温度梯度下实现了11.34 mV的开路电压和27.1 μW的最大输出功率。本研究为丝网印刷TE薄膜和器件的性能提升提供了理论和实践基础。
