Zhou Jiaoyan, Xie Mingzhang, Ji Huan, Cui Anyang, Ye Yan, Jiang Kai, Shang Liyan, Zhang Jinzhong, Hu Zhigao, Chu Junhao
Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China.
Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China.
ACS Appl Mater Interfaces. 2020 Apr 22;12(16):18674-18682. doi: 10.1021/acsami.0c01076. Epub 2020 Apr 7.
Van der Waals (vdW) heterostructures, integrated two-dimensional (2D) materials with various functional materials, provide a distinctive platform for next-generation optoelectronics with unique flexibility and high performance. However, exploring the vdW heterostructures combined with strongly correlated electronic materials is hitherto rare. Herein, a novel temperature-sensitive photodetector based on the GaSe/VO mixed-dimensional vdW heterostructure is discovered. Compared with previous devices, our photodetector exhibits excellent enhanced performance, with an external quantum efficiency of up to 109.6% and the highest responsivity (358.1 mA·W) under a 405 nm laser. Interestingly, we show that the heterostructure overcomes the limitation of a single material under the interaction between VO and GaSe, where the photoresponse is highly sensitive to temperature and can be further vanished at the critical value. The metal-insulator transition of VO, which controls the peculiar band-structure evolution across the heterointerface, is demonstrated to manipulate the photoresponse variation. This study enables us to elucidate the method of manipulating 2D materials by strongly correlated electronic materials, paving the way for developing high-performance and special optoelectronic applications.
范德华（vdW）异质结构，即集成了二维（2D）材料与各种功能材料，为下一代光电子学提供了一个具有独特灵活性和高性能的独特平台。然而，探索与强关联电子材料相结合的范德华异质结构迄今仍很罕见。在此，发现了一种基于GaSe/VO混合维度范德华异质结构的新型温度敏感光电探测器。与先前的器件相比，我们的光电探测器表现出优异的增强性能，在405 nm激光下外部量子效率高达109.6%，响应度最高（358.1 mA·W）。有趣的是，我们表明该异质结构克服了VO与GaSe相互作用下单一材料的局限性，其中光响应对温度高度敏感，并且在临界值时可以进一步消失。VO的金属-绝缘体转变控制着异质界面上独特的能带结构演化，被证明可以操纵光响应变化。这项研究使我们能够阐明通过强关联电子材料操纵二维材料的方法，为开发高性能和特殊光电子应用铺平了道路。
