Liang Jisheng, Yang Hengquan, Liu Chengyan, Miao Lei, Chen Junliang, Zhu Sijing, Xie Zhengchuan, Xu Wenjing, Wang Xiaoyang, Wang Jun, Peng Biaolin, Koumoto Kunihito
Guangxi Key Laboratory of Information Material, Guangxi Collaborative Innovation Center of Structure and Property for New Energy and Materials, School of Material Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, P. R. China.
School of Physics and Electronic & Electrical Engineering, and Jiangsu Key Laboratory of Modern Measurement Technology and Intelligent Systems, Huaiyin Normal University, Huai'an 223300, P. R. China.
ACS Appl Mater Interfaces. 2020 May 13;12(19):21799-21807. doi: 10.1021/acsami.0c01004. Epub 2020 Apr 29.
MgSb-based compounds by virtue of nontoxicity and low-cost have become a promising class of candidates for midtemperature thermoelectric power generation. Here, we successfully fabricated n-type MgSb-based materials using an inexpensive and efficient approach of one-step ball milling and spark plasma sintering, and demonstrate that a complementary and favorable effect of multiple elements coalloying/-doping leads to an excellent thermoelectric performance. The intrinsic p-type conducting behavior for MgSb could be changed to n-type through Bi and Se coalloying on Sb sublattices with excess Mg, resulting from the suppression of Mg vacancies and the formation of Mg interstitial. Furthermore, Mn doping on Mg sublattices could soften the chemical bonds, leading to the increase of carrier mobility and concentration simultaneously. Additionally, multielement coalloying/-doping could significantly increase the lattice disorder, which undoubtedly strengthens the phonon scattering and readily results in a suppressed lattice thermal conductivity. As a result, a highest value of 1.6 at 723 K and an average value up to 1.1 were obtained in the temperature range of 323-723 K in the MgMnSbBiSe sample, which is one of the highest values among the Te free MgSb. This work could give guidance for improving the thermoelectric performance of Zintl phase materials or even others using the multielement codoping/-alloying strategy.
基于MgSb的化合物由于无毒且成本低,已成为中温热电发电领域一类很有前景的候选材料。在此,我们采用一种廉价且高效的一步球磨和放电等离子烧结方法成功制备了n型MgSb基材料,并证明多元素共合金化/掺杂具有互补且有利的效果,从而带来优异的热电性能。通过在具有过量Mg的Sb亚晶格上进行Bi和Se共合金化,MgSb的本征p型导电行为可转变为n型,这是由于Mg空位的抑制和Mg间隙原子的形成。此外,在Mg亚晶格上进行Mn掺杂可软化化学键,从而同时提高载流子迁移率和浓度。此外,多元素共合金化/掺杂可显著增加晶格无序度,这无疑会增强声子散射并容易导致晶格热导率受到抑制。结果,在MgMnSbBiSe样品中,在723 K时获得了最高1.6的 值,在323 - 723 K温度范围内平均值高达1.1,这是无Te的MgSb中最高的值之一。这项工作可为采用多元素共掺杂/共合金化策略提高Zintl相材料甚至其他材料的热电性能提供指导。