Zhang Yangyi, Chen Jiaming, Hou Guozhi, Li Dongke, Wu Yangqing, Xu Jun, Xu Ling, Chen Kunji
Opt Express. 2020 Mar 2;28(5):6064-6070. doi: 10.1364/OE.384810.
Er ions doped titanium dioxide (TiO) thin films have been prepared by sol-gel method. The photoluminescence both in visible light range (510-580 nm and 640-690 nm) and near infrared light range (1400-1700nm) have been observed. The photoluminescence excitation spectra demonstrate that energy transfer from wide band-gap TiO to Er ions causes the infrared light emission. It is also found that the post annealing temperature can influence the luminescence intensity significantly. Based on sol-gel prepared TiO:Er thin films, we fabricate light emitting device containing ITO/TiO:Er/SiO/n-Si/Al structure. Both the visible and near infrared electroluminescence (EL) can be detected under the operation voltage as low as 5.6 V and the working current of 0.66 mA, which shows the lower power consumption compared with the conventional EL devices.
采用溶胶-凝胶法制备了铒离子掺杂的二氧化钛（TiO₂）薄膜。观察到了可见光范围（510 - 580纳米和640 - 690纳米）以及近红外光范围（1400 - 1700纳米）的光致发光现象。光致发光激发光谱表明，从宽带隙TiO₂到铒离子的能量转移导致了红外光发射。还发现退火后温度会显著影响发光强度。基于溶胶-凝胶法制备的TiO₂:Er薄膜，我们制造了具有ITO/TiO₂:Er/SiO₂/n-Si/Al结构的发光器件。在低至5.6伏的工作电压和0.66毫安的工作电流下，能够检测到可见光和近红外电致发光（EL），与传统的电致发光器件相比，其功耗更低。
