Deng Yijing, Ren Jun, Shi Yu, Wang Yi-Chieh, Cheng Li-Jing, Fay Patrick, Liu Lei
Opt Express. 2020 Mar 2;28(5):7259-7273. doi: 10.1364/OE.381775.
Substrate-integrated waveguides (SIWs) have recently attracted increasing attention for the development of terahertz (THz) circuits and systems. However, conventional SIWs employ fixed metallic vias to form the waveguide sidewalls, resulting in limited tunability and reconfigurability. In this paper, we report a novel approach for the realization of high-performance tunable and/or reconfigurable THz SIW structures. In this approach, photo-induced free carriers are generated in a high-resistivity silicon pillar-array structure to form well-defined, highly conductive, vertical sidewalls. The wave propagation properties of these optically-defined photo-induced SIWs (PI-SIWs) have been evaluated using full-wave electromagnetic simulations. Higher-functionality THz components, including a single-pole double-throw switch and a phase shifter were also designed and simulated. Based on these example circuits, PI-SIWs using pillar-array structures appear to be attractive candidates for the development of tunable and reconfigurable THz components for THz sensing, imaging, and communication systems.
衬底集成波导（SIW）最近在太赫兹（THz）电路和系统的发展中受到越来越多的关注。然而，传统的SIW采用固定的金属过孔来形成波导侧壁，导致可调性和可重构性有限。在本文中，我们报告了一种实现高性能可调谐和/或可重构太赫兹SIW结构的新方法。在这种方法中，在高电阻率硅柱阵列结构中产生光致自由载流子，以形成定义明确、高导电性的垂直侧壁。这些光学定义的光致SIW（PI-SIW）的波传播特性已通过全波电磁模拟进行了评估。还设计并模拟了包括单刀双掷开关和移相器在内的更高功能的太赫兹组件。基于这些示例电路，使用柱阵列结构的PI-SIW似乎是用于太赫兹传感、成像和通信系统的可调谐和可重构太赫兹组件开发的有吸引力的候选方案。
