Mutepfe Cleophas D K, Srivastava Viranjay M
Department of Electronic Engineering, Howard College, University of KwaZulu-Natal, Durban 4041, South Africa.
Nanomaterials (Basel). 2022 Dec 14;12(24):4443. doi: 10.3390/nano12244443.
A reconfigurable Substrate-Integrated Waveguide (SIW) filter operating in the THz region was designed in this work. Two SIW resonators were coupled through a magnetic iris to form a second-order filter with a double-layer substrate. The first substrate was silicon of permittivity 11.9; on top of it, silicon dioxide of permittivity 3.9 was placed. The ground and upper plane were composed of gold plates. Graphene material was then used for the tunability of the filter. A thin graphene sheet was sandwiched between the silicon dioxide substrate and the upper gold plate. An external DC bias voltage was then applied to change the chemical potential of graphene, which, in turn, managed to change the operational center frequency of the filter within the range of 1.289 THz to 1.297 THz, which translated to a bandwidth range of 8 GHz. The second part of this work centered on changing the aspect ratio of the graphene patch to change the center frequency. It was observed that the frequency changed within the range of 1.2908 THz to 1.2929 THz, which gave a bandwidth of 2.1 GHz change.
本工作设计了一种在太赫兹频段工作的可重构基片集成波导(SIW)滤波器。两个SIW谐振器通过磁孔耦合,形成一个具有双层基片的二阶滤波器。第一个基片是介电常数为11.9的硅;在其顶部放置了介电常数为3.9的二氧化硅。接地平面和上平面由金板组成。然后使用石墨烯材料实现滤波器的可调性。在二氧化硅基片和上金板之间夹有一层薄石墨烯片。施加外部直流偏置电压以改变石墨烯的化学势,进而使滤波器的工作中心频率在1.289太赫兹至1.297太赫兹范围内变化,这对应于8吉赫兹的带宽范围。本工作的第二部分集中于改变石墨烯贴片的纵横比以改变中心频率。观察到频率在1.2908太赫兹至1.2929太赫兹范围内变化,带宽变化为2.1吉赫兹。