Role of surface passivation in integrated sub-bandgap silicon photodetection.

We study experimentally the effect of oxide removal on the sub-bandgap photodetection in silicon waveguides at the telecom wavelength regime. Depassivating the device allows for the enhancement of the quantum efficiency by about 2-3 times. Furthermore, the propagation loss within the device is significantly reduced by the oxide removal. Measuring the device 60 days after the depassivation shows slight differences. We provide a possible explanation for these observations. Clearly, passivation and depassivation play an essential role in the design and the implementation of such sub-bandgap photodetector devices for applications such as on-chip light monitoring.