Wang Xiaotian, Cheng Zhenxiang, Zhang Gang, Wang Biao, Wang Xiao-Lin, Chen Hong
Institute for Superconducting and Electronic Materials (ISEM), University of Wollongong, Wollongong 2500, Australia.
Nanoscale. 2020 Apr 21;12(15):8314-8319. doi: 10.1039/d0nr00635a. Epub 2020 Apr 1.
Topological semimetals, including topological nodal point semimetals (TNPSs), topological nodal line state semimetals (TNLSs), and topological nodal surface semimetals (TNSSs), featuring zero-dimensional (0D), one-dimensional (1D), and two-dimensional (2D) topological elements (TEs), respectively, have attracted widespread attention in recent years. In this work, based on first-principles calculations, we propose for the first time that three different (0D, 1D, and 2D) TEs are simultaneously present in a synthetic compound, HfIrB, with a P6/m type structure. In detail, HfIrB hosts a Dirac point (DP) state at the K point, a TNL state in the k = 0 plane, and a 2D TNS state in the k = π plane, respectively. All sorts of topological elements, 0D, 1D, and 2D TEs, coexisting in the P6/m type HfIrB, provide an ideal platform to study the rich fermionic states and their related physical properties in this type of compound. In addition, because the 0D, 1D, and 2D TEs of HfIrB are equally distributed in different energy ranges relative to the Fermi level, an approach is proposed to utilize individual TEs to build on-demand devices.
拓扑半金属,包括拓扑节点点半金属(TNPSs)、拓扑节点线态半金属(TNLSs)和拓扑节点面半金属(TNSSs),分别具有零维(0D)、一维(1D)和二维(2D)拓扑元素(TEs),近年来引起了广泛关注。在这项工作中,基于第一性原理计算,我们首次提出在具有P6/m型结构的合成化合物HfIrB中同时存在三种不同的(0D、1D和2D)TEs。具体而言,HfIrB在K点处具有狄拉克点(DP)态,在k = 0平面中具有TNL态,在k = π平面中具有2D TNS态。P6/m型HfIrB中共存的各种拓扑元素,即0D、1D和2D TEs,为研究这类化合物中丰富的费米子态及其相关物理性质提供了一个理想平台。此外,由于HfIrB的0D、1D和2D TEs相对于费米能级在不同能量范围内均匀分布,因此提出了一种利用单个TEs构建按需设备的方法。