Electrical and Computer Engineering, University of Texas at Austin, Austin, TX, United States of America.
Nanotechnology. 2020 May 1;31(29):294001. doi: 10.1088/1361-6528/ab86e8. Epub 2020 Apr 6.
Lateral inhibition is an important functionality in neuromorphic computing, modeled after the biological neuron behavior that a firing neuron deactivates its neighbors belonging to the same layer and prevents them from firing. In most neuromorphic hardware platforms lateral inhibition is implemented by external circuitry, thereby decreasing the energy efficiency and increasing the area overhead of such systems. Recently, the domain wall-magnetic tunnel junction (DW-MTJ) artificial neuron is demonstrated in modeling to be intrinsically inhibitory. Without peripheral circuitry, lateral inhibition in DW-MTJ neurons results from magnetostatic interaction between neighboring neuron cells. However, the lateral inhibition mechanism in DW-MTJ neurons has not been studied thoroughly, leading to weak inhibition only in very closely-spaced devices. This work approaches these problems by modeling current- and field- driven DW motion in a pair of adjacent DW-MTJ neurons. We maximize the magnitude of lateral inhibition by tuning the magnetic interaction between the neurons. The results are explained by current-driven DW velocity characteristics in response to an external magnetic field and quantified by an analytical model. Dependence of lateral inhibition strength on device parameters is also studied. Finally, lateral inhibition behavior in an array of 1000 DW-MTJ neurons is demonstrated. Our results provide a guideline for the optimization of lateral inhibition implementation in DW-MTJ neurons. With strong lateral inhibition achieved, a path towards competitive learning algorithms such as the winner-take-all are made possible on such neuromorphic devices.
侧向抑制是神经形态计算中的一个重要功能,其模仿了生物神经元的行为,即一个发射神经元会使属于同一层的相邻神经元失活,从而阻止它们发射。在大多数神经形态硬件平台中,侧向抑制是通过外部电路来实现的,这降低了系统的能量效率并增加了其面积开销。最近,已经证明了畴壁-磁隧道结 (DW-MTJ) 人工神经元在建模中具有内在的抑制性。无需外围电路,DW-MTJ 神经元中的侧向抑制来自于相邻神经元之间的磁静相互作用。然而,DW-MTJ 神经元中的侧向抑制机制尚未得到充分研究,导致仅在非常紧密间隔的器件中才会产生较弱的抑制。通过对一对相邻 DW-MTJ 神经元中的电流和磁场驱动 DW 运动进行建模,这项工作解决了这些问题。我们通过调整神经元之间的磁相互作用来最大化侧向抑制的幅度。结果通过对外部磁场响应的电流驱动 DW 速度特性进行解释,并通过解析模型进行量化。还研究了侧向抑制强度对器件参数的依赖性。最后,展示了在由 1000 个 DW-MTJ 神经元组成的阵列中的侧向抑制行为。我们的结果为优化 DW-MTJ 神经元中的侧向抑制实现提供了指导。通过实现强侧向抑制,可以在这种神经形态设备上实现类似于胜者全拿的竞争学习算法。