Ran Huijuan, Duan Xuewei, Zheng Rong, Xie Fuli, Chen Lijuan, Zhao Zhen, Han Ruijun, Lei Zheng, Hu Jian-Yong
Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education; Shaanxi Key Laboratory for Advanced Energy Devices; Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xian 710119, China.
ACS Appl Mater Interfaces. 2020 May 20;12(20):23225-23235. doi: 10.1021/acsami.0c04552. Epub 2020 Apr 15.
Altering the charge carrier transport polarities of organic semiconductors by molecular orbital distribution has gained great interest. Herein, we report two isomeric azulene-decorated naphthodithiophene diimide (NDTI)-based triads (e.g., NDTI-B2Az and NDTI-B6Az), in which two azulene units were connected with NDTI at the 2-position of the azulene ring in NDTI-B2Az, whereas two azulene units were incorporated with NDTI at the 6-position of the azulene ring in NDTI-B6Az. The two isomeric triads were excellently soluble in common organic solvents. Density functional theory calculations on the molecular orbital distributions of the triads reveal that the lowest unoccupied molecular orbitals are completely delocalized over the entire molecule for both NDTI-B2Az and NDTI-B6Az, indicating great potential for n-type transport behavior, whereas the highest occupied molecular orbitals are mainly delocalized over the entire molecule for NDTI-B2Az or only localized at the two terminal azulene units for NDTI-B6Az, implying great potential for p-type transport behavior for the former and a disadvantage of hole carrier transport for the latter. Under ambient conditions, solution-processed bottom-gate top-contact transistors based on NDTI-B2Az showed ambipolar field-effect transistor (FET) characteristics with high electron and hole mobilities of 0.32 (effective electron mobility ≈0.14 cm V s according to a reliability factor of 43%) and 0.03 cm V s (effective hole mobility ≈0.01 cm V s according to a reliability factor of 33%), respectively, whereas a typically unipolar n-channel behavior is found for a film of NDTI-B6Az with a high electron mobility up to 0.13 cm V s (effective electron mobility ≈0.06 cm V s according to a reliability factor of 43%). The results indicate that the polarity change of organic FETs based on the two isomeric triads could be controlled by the molecular orbital distributions through the connection position between the azulene unit and NDTI.
通过分子轨道分布改变有机半导体的电荷载流子传输极性已引起了极大的关注。在此,我们报道了两种基于薁修饰的萘并二噻吩二酰亚胺(NDTI)的异构体三联体(例如,NDTI-B2Az和NDTI-B6Az),其中在NDTI-B2Az中,两个薁单元在薁环的2位与NDTI相连,而在NDTI-B6Az中,两个薁单元在薁环的6位与NDTI结合。这两种异构体三联体在常见有机溶剂中具有出色的溶解性。对三联体分子轨道分布的密度泛函理论计算表明,对于NDTI-B2Az和NDTI-B6Az而言,最低未占据分子轨道在整个分子上完全离域,表明具有n型传输行为的巨大潜力,而最高占据分子轨道对于NDTI-B2Az主要在整个分子上离域,或者对于NDTI-B6Az仅局限于两个末端薁单元,这意味着前者具有p型传输行为的巨大潜力,而后者在空穴载流子传输方面存在劣势。在环境条件下,基于NDTI-B2Az的溶液处理底栅顶接触晶体管表现出双极性场效应晶体管(FET)特性,电子迁移率和空穴迁移率分别高达0.32(根据可靠性因子43%,有效电子迁移率≈0.14 cm² V⁻¹ s⁻¹)和0.03 cm² V⁻¹ s⁻¹(根据可靠性因子33%,有效空穴迁移率≈0.01 cm² V⁻¹ s⁻¹),而对于NDTI-B6Az薄膜则发现典型的单极性n沟道行为,电子迁移率高达0.13 cm² V⁻¹ s⁻¹(根据可靠性因子43%,有效电子迁移率≈0.06 cm² V⁻¹ s⁻¹)。结果表明,基于这两种异构体三联体的有机FET的极性变化可以通过薁单元与NDTI之间的连接位置的分子轨道分布来控制。