Tong Tao, Wang Shujuan, Zhao Jie, Cheng Baochang, Xiao Yanhe, Lei Shuijin
Nanoscale Science and Technology Laboratory, Institute for Advanced Study, Nanchang University, Jiangxi 330031, P. R. China.
Nanoscale Horiz. 2019 Jan 1;4(1):138-147. doi: 10.1039/c8nh00182k. Epub 2018 Sep 17.
Single CdS nanobelt-based photodetectors are strongly dependent on bias and temperature. They not only show a strong photoresponse to close bandgap energy light with ultrahigh responsivity of approximately 10 A W, large photo-to-dark current ratio of 10, photoconductive gain of 10, and fast response and recovery speed at a large bias of 20 V, but can also show a weak photoresponse to above- and below-bandgap energy light. Moreover, their spectral response range can show tunable selectivity to above- and below-bandgap light, which can be accurately controlled by temperature and bias. More importantly, the modulated spectral response characteristics show excellent memory behaviour after reversible writing and erasing by using temperature and bias. In nanostructures, abundant surface states and stacking fault-related traps play a vital role in the ultrahigh photoresponse to bandgap light and the erasable memory effect on spectral response range selectivity. Given the erasable memory of the spectral response selectivity with excellent photoconduction performance, the CdS NBs possess important applications in new-generation photodetection and photomemory devices.
基于单个硫化镉纳米带的光电探测器强烈依赖于偏置和温度。它们不仅对带隙能量接近的光表现出强烈的光响应，具有约10 A/W的超高响应度、10的大光暗电流比、10的光电导增益，并且在20 V的大偏置下具有快速的响应和恢复速度，而且对带隙以上和以下能量的光也能表现出微弱的光响应。此外，它们的光谱响应范围对带隙以上和以下的光可表现出可调谐的选择性，这可以通过温度和偏置精确控制。更重要的是，通过利用温度和偏置进行可逆写入和擦除后，调制后的光谱响应特性表现出优异的记忆行为。在纳米结构中，丰富的表面态和与堆垛层错相关的陷阱在对带隙光的超高光响应以及对光谱响应范围选择性的可擦除记忆效应中起着至关重要的作用。鉴于光谱响应选择性具有可擦除记忆以及优异的光电导性能，硫化镉纳米带在新一代光电探测和光存储器件中具有重要应用。
