• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利:CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验

用于挥发性实时传感器和可擦除非易失性应力存储器的CdS@C混合纳米带的巨压阻效应

Giant Piezoresistive Effect of CdS@C Hybrid Nanobelts for Volatile Real-Time Sensor and Erasable Nonvolatile Memory to Stress.

作者信息

Ouyang Zhiyong, Huang Qianfei, Xu Changsen, Zhao Jie, Xiao Yanhe, Lei Shuijin, Cheng Baochang

机构信息

Nanoscale Science and Technology Laboratory, Institute for Advanced Study, Nanchang University, Jiangxi 330031, P. R. China.

School of Information Engineering, Jiangxi Modern Polytechnic College, Jiangxi 330095, P. R. China.

出版信息

ACS Appl Mater Interfaces. 2021 May 19;13(19):22785-22795. doi: 10.1021/acsami.1c02571. Epub 2021 May 7.

DOI:10.1021/acsami.1c02571
PMID:33960767
Abstract

Here, CdS@C nanohybrid composites, where CdS quantum dots (QDs) are uniformly embedded in carbon micro-/nanobelt matrixes, are synthesized via a combustion synthesis followed by a postvulcanization. In the nanohybrids, trap centers are effectively created by the introduction of QDs and moreover their barrier height and filling level can be effectively modulated through a coupling of externally loaded strain and bias. Thus, a single CdS@C micro-/nanobelt-based two-terminal device can exhibit an ultrahigh real-time response to compressive and tensile strains with a tremendous gauge factor of above 10, high sensitivity, and fast response and recovery. More importantly, the trapped charges can be mechanically excited by stress, and furthermore, the stress-triggered high-resistance state can be well-maintained at room temperature and a relatively low operation bias. However, it can be back to its initial low resistance state by loading a relatively large bias, showing a superior erasable stress memory function with a window of about 10. By an effective construction of trap centers in hybrid composites, not only can an ultrahigh performance of volatile real-time stress sensor be obtained under the synergism of external stress and electric field but also can an outstanding erasable nonvolatile stress memory be successfully realized.

摘要

在此,通过燃烧合成随后进行后硫化合成了CdS@C纳米杂化复合材料,其中CdS量子点(QDs)均匀地嵌入在碳微/纳米带基质中。在这些纳米杂化物中,通过引入量子点有效地产生了陷阱中心,而且通过外部加载应变和偏压的耦合可以有效地调节它们的势垒高度和填充水平。因此,基于单个CdS@C微/纳米带的两终端器件可以对压缩和拉伸应变表现出超高的实时响应,具有超过10的巨大应变系数、高灵敏度以及快速响应和恢复能力。更重要的是,捕获的电荷可以通过应力进行机械激发,此外,应力触发的高电阻状态在室温及相对较低的工作偏压下可以很好地保持。然而,通过施加相对较大的偏压,它可以回到其初始的低电阻状态,显示出具有约10的窗口的优异可擦除应力记忆功能。通过在杂化复合材料中有效构建陷阱中心,不仅可以在外部应力和电场的协同作用下获得超高性能的挥发性实时应力传感器,而且可以成功实现出色的可擦除非易失性应力记忆。

相似文献

1
Giant Piezoresistive Effect of CdS@C Hybrid Nanobelts for Volatile Real-Time Sensor and Erasable Nonvolatile Memory to Stress.用于挥发性实时传感器和可擦除非易失性应力存储器的CdS@C混合纳米带的巨压阻效应
ACS Appl Mater Interfaces. 2021 May 19;13(19):22785-22795. doi: 10.1021/acsami.1c02571. Epub 2021 May 7.
2
Enhanced Giant Piezoresistance Performance of Sandwiched ZnS/Si/SiO Radial Heterostructure Nanotubes for Nonvolatile Stress Memory with Repeatable Writing and Erasing.夹心 ZnS/Si/SiO 径向异质结构纳米管的增强压阻性能用于具有可重复写入和擦除功能的非易失性应力存储器。
ACS Appl Mater Interfaces. 2016 Dec 21;8(50):34648-34658. doi: 10.1021/acsami.6b10966. Epub 2016 Dec 12.
3
Erasable memory properties of spectral selectivity modulated by temperature and bias in an individual CdS nanobelt-based photodetector.基于单个硫化镉纳米带的光电探测器中,温度和偏置调制光谱选择性的可擦除记忆特性。
Nanoscale Horiz. 2019 Jan 1;4(1):138-147. doi: 10.1039/c8nh00182k. Epub 2018 Sep 17.
4
Control of positive and negative photo- and thermal-responses in a single PbI@CHNHPbI micro/nanowire-based device for real-time sensing, nonvolatile memory, and logic operation.基于单个PbI@CHNHPbI微纳线的器件中光响应和热响应的正负控制,用于实时传感、非易失性存储和逻辑运算
Mater Horiz. 2024 May 7;11(9):2258-2270. doi: 10.1039/d4mh00070f.
5
Reversible Negative Resistive Switching in an Individual Fe@AlO Hybrid Nanotube for Nonvolatile Memory.个体 Fe@AlO 混合纳米管中的可逆负阻开关用于非易失性存储器。
ACS Appl Mater Interfaces. 2018 Jun 6;10(22):19002-19009. doi: 10.1021/acsami.8b01153. Epub 2018 May 23.
6
Charge-Trap Memory Based on Hybrid 0D Quantum Dot-2D WSe Structure.基于混合零维量子点-二维二硒化钨结构的电荷俘获存储器。
Small. 2018 May;14(20):e1800319. doi: 10.1002/smll.201800319. Epub 2018 Apr 17.
7
Visible Light-Erasable Oxide FET-Based Nonvolatile Memory Operated with a Deep Trap Interface.基于可见光照可擦除氧化物 FET 的深陷阱界面非易失性存储器。
ACS Appl Mater Interfaces. 2018 Aug 8;10(31):26405-26412. doi: 10.1021/acsami.8b07749. Epub 2018 Jul 24.
8
Light enhanced low-voltage nonvolatile memory based on all-inorganic perovskite quantum dots.基于全无机钙钛矿量子点的光增强型低电压非易失性存储器。
Nanotechnology. 2019 Sep 13;30(37):37LT01. doi: 10.1088/1361-6528/ab2809. Epub 2019 Jun 10.
9
A Tunneling Dielectric Layer Free Floating Gate Nonvolatile Memory Employing Type-I Core-Shell Quantum Dots as Discrete Charge-Trapping/Tunneling Centers.一种采用I型核壳量子点作为离散电荷俘获/隧穿中心的无隧穿介电层浮栅非易失性存储器。
Small. 2019 Jan;15(1):e1804156. doi: 10.1002/smll.201804156. Epub 2018 Nov 27.
10
CdS QDs/N-methylpolypyrrole hybrids as fluorescent probe for ultrasensitive and selective detection of picric acid.CdS QDs/N-甲基吡咯烷酮聚合物杂化材料作为荧光探针用于检测苦味酸的超灵敏和选择性
Spectrochim Acta A Mol Biomol Spectrosc. 2019 Jun 5;216:230-235. doi: 10.1016/j.saa.2019.03.032. Epub 2019 Mar 14.