He Tao, Zhang Jinlong, Jiao Hongfei, Wang Zhanshan, Cheng Xinbin
MOE Key Laboratory of Advanced Micro-Structured Materials, Shanghai 200092, People's Republic of China. Institute of Precision Optical Engineering, School of Physics Science and Engineering, Tongji University, Shanghai 200092, People's Republic of China.
Nanotechnology. 2020 Jul 31;31(31):315203. doi: 10.1088/1361-6528/ab8768. Epub 2020 Apr 7.
Si:H and TiO multilayer dielectric gratings (MDGs) were studied comparatively to highlight the influence of refractive indices on fabrication tolerances, including tolerances for grating width errors and cross-sectional shape errors. The fabrication tolerance of Si:H MDGs is two to four times greater than that of TiO MDGs, because the higher refractive index of Si:H has a stronger ability to restrain electric fields. It was further revealed in these studies that a Si:H MDG with positive trapezoidal errors has minor influence on high diffraction efficiency bandwidth. Finally, a Si:H MDG was prepared without iterative corrections. Although large fabrication errors of grating width and cross-sectional shape existed, the MDG still had a 146 nm bandwidth with diffraction efficiency over 97%, which verifies the robustness of the proposed Si:H MDG.