Lan Yayao, Liu Zhifeng, Guo Zhengang, Ruan Mengnan, Li Xifei
School of Materials Science and Engineering, Tianjin Chengjian University, 300384, Tianjin, China.
Chem Commun (Camb). 2020 May 14;56(39):5279-5282. doi: 10.1039/d0cc00273a. Epub 2020 Apr 9.
A p-type Co-ZnFeO film with a one-dimensional (1D) rod-like morphology is fabricated for the first time on fluorine-doped tin oxide (FTO) through a hydrothermal reaction and sintering treatment. The p-type Co-ZnFeO is obtained by doping Co ions into n-type ZnFeO, in which Zn sites are substituted by Co. Compared with the n-type ZnFeO, the light absorption edge of Co-ZnFeO is clearly shifted from 589 to 624 nm, and the positions of the valence/conduction band of Co-ZnFeO meet the thermodynamic requirements for water splitting. The photocurrent density of p-type Co-ZnFeO is -0.22 mA cm at 0 V vs. the reversible hydrogen electrode (RHE), which is enhanced 7.33-times vs. that of n-type ZnFeO (-0.03 mA cm at 0 V vs. RHE). This work provides useful insights into tuning the p-n character of semiconductors to realize efficient photoelectrochemical (PEC) water splitting.
首次通过水热反应和烧结处理在氟掺杂氧化锡（FTO）上制备了具有一维（1D）棒状形态的p型Co-ZnFeO薄膜。p型Co-ZnFeO是通过将Co离子掺杂到n型ZnFeO中获得的，其中Zn位点被Co取代。与n型ZnFeO相比，Co-ZnFeO的光吸收边缘从589 nm明显移至624 nm，并且Co-ZnFeO的价带/导带位置满足水分解的热力学要求。p型Co-ZnFeO在相对于可逆氢电极（RHE）为0 V时的光电流密度为-0.22 mA/cm²，相对于n型ZnFeO（在相对于RHE为0 V时为-0.03 mA/cm²）提高了7.33倍。这项工作为调节半导体的p-n特性以实现高效光电化学（PEC）水分解提供了有用的见解。
