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Zr 掺杂赤铁矿纳米棒阵列的物理和光电化学性质。

Physical and photoelectrochemical properties of Zr-doped hematite nanorod arrays.

机构信息

International Research Center for Renewable Energy, State Key Laboratory of Multiphase Flow in Power Engineering, Xi'an Jiaotong University, Shaanxi 710049, China.

出版信息

Nanoscale. 2013 Oct 21;5(20):9867-74. doi: 10.1039/c3nr03245k.

Abstract

This work examines the effect of Zr(4+) ions on the physical and photoelectrochemical (PEC) properties of hematite (α-Fe2O3) nanorod arrays grown in an aqueous solution containing zirconyl nitrate (ZrO(NO3)2) as a dopant precursor. The concentration of ZrO(NO3)2 in the precursor solution influenced both the film thickness and the Zr(4+) concentration in the resulting films. Zr doping was found to enhance the photocurrent for water splitting; the highest photocurrent at 1.0 V vs. Ag/AgCl (0.33 mA cm(-2)) for the Zr-doped α-Fe2O3 film was approximately 7.2 times higher than that for the undoped film (0.045 mA cm(-2)). Additionally, the incident photon to current efficiency (IPCE) at 360 nm and 1.23 V vs. the reversible hydrogen electrode (RHE) increased from 3.8% to 13.6%. Ultrafast transient absorption spectroscopy suggests that Zr doping may influence PEC performance by reducing the rate of electron-hole recombination.

摘要

这项工作研究了 Zr(4+) 离子对在含有硝酸氧锆 (ZrO(NO3)2) 作为掺杂前体的水溶液中生长的赤铁矿 (α-Fe2O3) 纳米棒阵列的物理和光电化学 (PEC) 性能的影响。前体溶液中 ZrO(NO3)2 的浓度既影响薄膜的厚度,也影响所得薄膜中 Zr(4+) 的浓度。Zr 掺杂被发现可以增强水分解的光电流;在 1.0 V 相对于 Ag/AgCl(0.33 mA cm(-2)) 下,Zr 掺杂的α-Fe2O3 薄膜的最高光电流(0.33 mA cm(-2)) 大约是未掺杂薄膜(0.045 mA cm(-2)) 的 7.2 倍。此外,在 360nm 和 1.23V 相对于可逆氢电极 (RHE) 时的光电流效率(IPCE)从 3.8%增加到 13.6%。超快瞬态吸收光谱表明,Zr 掺杂可能通过降低电子-空穴复合速率来影响 PEC 性能。

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