Kunioka Haruno, Kihou Kunihiro, Kato Daichi, Usui Hidetomo, Iida Tsutomu, Nishiate Hirotaka, Kuroki Kazuhiko, Yamamoto Atsushi, Lee Chul-Ho
National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568, Japan.
Department of Materials Science and Technology, Tokyo University of Science, Katsushika, Tokyo 125-8585, Japan.
Inorg Chem. 2020 May 4;59(9):5828-5834. doi: 10.1021/acs.inorgchem.9b02680. Epub 2020 Apr 10.
The compound BaKZnAs has a low-temperature phase (α-phase) crystallized in the α-BaCuS-type structure and a high-temperature phase (β-phase) crystallized in the ThCrSi-type structure. We successfully obtained the β-phase at room temperature as a metastable state by quenching from above the structural phase transition. This allowed us to determine the thermoelectric properties of the β-phase from room to high temperature in the range of 0.00 ≤ ≤ 0.10. The lattice thermal conductivity is quite low, with a value less than 1 W/mK at 773 K, independent of . The effective suppression may be due to lattice instability in the underdoped region and to randomness in the overdoped region. The maximum dimensionless figure-of-merit was 0.30 at 773 K for = 0.03 with the power factor of 0.61 mW/mK, which is relatively high for a ThCrSi-type structure. The results demonstrate the effectiveness of quenching for obtaining a low lattice thermal conductivity, thus providing a new method for attaining high thermoelectric performance.
