Université de Paris, ITODYS, CNRS, UMR 7086, 15 rue J-A de Baïf, 75205 Paris Cedex 13, France.
J Am Chem Soc. 2020 Apr 29;142(17):7732-7736. doi: 10.1021/jacs.0c01213. Epub 2020 Apr 20.
Thin layers of diarylethene oligomers (oligo(DAE)) were deposited by electrochemical reduction of a diazonium salt on glassy carbon and gold electrodes. The layers were fully characterized using electrochemistry, XPS, and AFM, and switching between open and closed forms using light was evidenced. Solid-state molecular junctions (MJs), in which a C-AFM tip is used as the top contact, were fabricated with total layer thicknesses fixed at 2-3 nm and 8-9 nm, i.e. below and above the direct tunneling limit. DAE was then photoswitched between its open and closed forms. Oligo(DAE) MJs using the open form of DAE are highly resistive while those with DAE in the closed form are more conductive. ON/OFF ratios of 2-3 and 200-400 were obtained for 3-nm- and 9-nm-thick DAE MJs, respectively.
薄的二芳烯寡聚物（寡聚（DAE））层通过在玻璃碳和金电极上电化学还原重氮盐沉积而成。使用电化学、XPS 和 AFM 对层进行了全面表征，并通过光证明了其在开环和闭环形式之间的切换。使用 C-AFM 尖端作为顶接触的固态分子结（MJ）的总层厚度固定在 2-3nm 和 8-9nm，即在直接隧穿极限以下和以上。然后，DAE 在其开环和闭环形式之间进行光切换。处于开环形式的寡聚（DAE）MJ 的电阻很高，而处于闭环形式的 DAE 的电阻较低。对于 3nm 和 9nm 厚的 DAE MJ，分别获得了 2-3 和 200-400 的 ON/OFF 比。
