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功能化硅电极在电化学中的应用。

Functionalized Silicon Electrodes in Electrochemistry.

机构信息

School of Chemistry, Australia Centre for NanoMedicine, ARC Centre of Excellence in Convergent Bio-Nano Science and Technology, University of New South Wales, Sydney, NSW 2052, Australia; email:

出版信息

Annu Rev Anal Chem (Palo Alto Calif). 2020 Jun 12;13(1):135-158. doi: 10.1146/annurev-anchem-091619-092506. Epub 2020 Apr 14.

DOI:10.1146/annurev-anchem-091619-092506
PMID:32289237
Abstract

Avoiding the growth of SiO has been an enduring task for the use of silicon as an electrode material in dynamic electrochemistry. This is because electrochemical assays become unstable when the SiO levels change during measurements. Moreover, the silicon electrode can be completely passivated for electron transfer if a thick layer of insulating SiO grows on the surface. As such, the field of silicon electrochemistry was mainly developed by electron-transfer studies in nonaqueous electrolytes and by applications employing SiO-passivated silicon-electrodes where no DC currents are required to cross the electrode/electrolyte interface. A solution to this challenge began by functionalizing Si-H electrodes with monolayers based on Si-O-Si linkages. These monolayers have proven very efficient to avoid SiO formation but are not stable for a long-term operation in aqueous electrolytes due to hydrolysis. It was only with the development of self-assembled monolayers based on Si-C linkages that a reliable protection against SiO formation was achieved, particularly with monolayers based on α,ω-dialkynes. This review discusses in detail how this surface chemistry achieves such protection, the electron-transfer behavior of these monolayer-modified silicon surfaces, and the new opportunities for electrochemical applications in aqueous solution.

摘要

避免 SiO 的生长一直是将硅用作动态电化学中的电极材料的一项持久任务。这是因为当测量过程中 SiO 水平发生变化时,电化学分析会变得不稳定。此外,如果在表面上生长出一层厚厚的绝缘 SiO,硅电极可以完全被钝化以进行电子转移。因此,硅电化学领域主要是通过在非水电解液中进行电子转移研究以及通过使用不需要穿过电极/电解液界面的 DC 电流的 SiO 钝化硅电极的应用来开发的。解决此挑战的方法是通过基于 Si-O-Si 键的单层对 Si-H 电极进行功能化。这些单层已被证明非常有效地避免了 SiO 的形成,但由于水解,它们在水基电解液中长期运行时并不稳定。只有通过开发基于 Si-C 键的自组装单层,才实现了对 SiO 形成的可靠保护,尤其是基于α,ω-二炔的单层。这篇综述详细讨论了这种表面化学如何实现这种保护,这些单层修饰的硅表面的电子转移行为,以及在水溶液中进行电化学应用的新机会。

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