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CsAgBiBr双钙钛矿纳米晶体中电子谷间散射介导的直接到间接束缚激子的转移

Transfer of Direct to Indirect Bound Excitons by Electron Intervalley Scattering in CsAgBiBr Double Perovskite Nanocrystals.

作者信息

Dey Amrita, Richter Alexander F, Debnath Tushar, Huang He, Polavarapu Lakshminarayana, Feldmann Jochen

机构信息

Chair for Photonics and Optoelectronics, Nano-Institute Munich and Department of Physics, Ludwig-Maximilians-Universität (LMU), Königinstraße 10, 80539 Munich, Germany.

出版信息

ACS Nano. 2020 May 26;14(5):5855-5861. doi: 10.1021/acsnano.0c00997. Epub 2020 Apr 28.

DOI:10.1021/acsnano.0c00997
PMID:32298081
Abstract

Lead-free halide double perovskites have emerged as a nontoxic alternative to the heavily researched lead-based halide perovskites. However, their optical properties and the initial charge carrier relaxation processes are under debate. In this study, we apply time-resolved photoluminescence and differential transmission spectroscopy to investigate the photoexcited charge carrier dynamics within the indirect band structure of CsAgBiBr nanocrystals. Interestingly, we observe a high energetic emission stemming from the direct band gap, besides the previously reported emission from the indirect band gap transition. We attribute this emission to the radiative recombination of direct bound excitons. This emission maximum redshifts nearly 1 eV within 10 ps due to electron intervalley scattering, which leads to a transfer of direct to indirect bound excitons. We conclude that these direct bound excitons possess a giant oscillator strength causing not only a pronounced absorption peak at the optical band gap energy but also luminescence to occur at the direct band gap transition in spite of the prevailing intervalley scattering process. These results expand the understanding of the optical properties and the charge carrier relaxation in double perovskites, thus, facilitating the further development of optoelectronic devices harnessing lead-free perovskites.

摘要

无铅卤化物双钙钛矿已成为经过大量研究的铅基卤化物钙钛矿的无毒替代品。然而,它们的光学性质和初始电荷载流子弛豫过程仍存在争议。在本研究中,我们应用时间分辨光致发光和差分透射光谱来研究CsAgBiBr纳米晶体间接带隙结构内光激发电荷载流子的动力学。有趣的是,除了先前报道的间接带隙跃迁发射外,我们还观察到源于直接带隙的高能发射。我们将这种发射归因于直接束缚激子的辐射复合。由于电子谷间散射,这种发射最大值在10皮秒内红移近1电子伏特,这导致直接束缚激子向间接束缚激子的转移。我们得出结论,这些直接束缚激子具有巨大的振子强度,不仅在光学带隙能量处引起明显的吸收峰,而且尽管存在主导的谷间散射过程,但在直接带隙跃迁处仍会发生发光。这些结果扩展了对双钙钛矿光学性质和电荷载流子弛豫的理解,从而促进了利用无铅钙钛矿的光电器件的进一步发展。

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